www.vishay.com
2
Document Number: 67690
S11-0865-Rev. A, 02-May-11
Vishay Siliconix
Si2329DS
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 8 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= - 250 µA
- 6
mV/°C
V
GS(th)
Temperature Coefficient
V
GS(th)
/T
J
2.3
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 0.35 - 0.8 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 5 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 8 V, V
GS
= 0 V
- 1
µA
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 55 °C
- 10
On-State Drain Current
a
I
D(on)
V
DS
- 5 V, V
GS
= - 5.3 V
- 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 5.3 A
0.025 0.030
V
GS
= - 2.5 V, I
D
= - 4.8 A
0.030 0.036
V
GS
= - 1.8 V, I
D
= - 4.2 A
0.037 0.048
V
GS
= - 1.5 V, I
D
= - 3.5 A
0.045 0.068
V
GS
= - 1.2 V, I
D
= - 0.8 A
0.060 0.120
Forward Transconductance
a
g
fs
V
DS
= - 4 V, I
D
= - 5.3 A
2.0 S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 4 V, V
GS
= 0 V, f = 1 MHz
1485
pFOutput Capacitance
C
oss
480
Reverse Transfer Capacitance
C
rss
435
Total Gate Charge
Q
g
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 5.3 A
19.3 29
nC
V
DS
= - 4 V, V
GS
= - 2.5 V, I
D
= - 5.3 A
11.8 18
Gate-Source Charge
Q
gs
1.7
Gate-Drain Charge
Q
gd
6.2
Gate Resistance
R
g
f = 1 MHz 0.8 4.2 8.4
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 4 V, R
L
= 0.9
I
D
= - 4.2 A, V
GEN
= - 4.5 V, R
g
= 1
20 30
ns
Rise Time
t
r
22 33
Turn-Off Delay Time
t
d(off)
46 69
Fall Time
t
f
20 30
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
- 2.1
A
Pulse Diode Forward Current
a
I
SM
- 20
Body Diode Voltage
V
SD
I
S
= - 4.2 A
- 0.8 - 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 4.2 A, dI/dt = 100 A/µs, T
J
= 25 °C
40 60 ns
Body Diode Reverse Recovery Charge
Q
rr
26 39 nC
Reverse Recovery Fall Time
t
a
17
ns
Reverse Recovery Rise Time
t
b
23
