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SI2329DS-T1-GE3

SI2329DS-T1-GE3
Mfr. #:
SI2329DS-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -8V Vds 5V Vgs SOT-23
Lifecycle:
New from this manufacturer.
Datasheet:
SI2329DS-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2329DS-T1-GE3 DatasheetSI2329DS-T1-GE3 Datasheet (P4-P6)SI2329DS-T1-GE3 Datasheet (P7-P9)SI2329DS-T1-GE3 Datasheet (P10)
ECAD Model:
More Information:
SI2329DS-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Number of Channels:
1 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
8 V
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
30 mOhms
Vgs th - Gate-Source Threshold Voltage:
350 mV
Vgs - Gate-Source Voltage:
4.5 V
Qg - Gate Charge:
19.3 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI2
Transistor Type:
1 P-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
2 S
Fall Time:
20 ns
Product Type:
MOSFET
Rise Time:
22 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
46 ns
Typical Turn-On Delay Time:
20 ns
Unit Weight:
0.000282 oz
Tags
SI232, SI23, SI2
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ler Electronic
VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV
***ure Electronics
Si2329DS Series 8 V 5.3 A 0.03 Ohm SMT P-Channel MOSFET - SOT-23-3
***ied Electronics & Automation
SI2329DS-T1-GE3 P-channel MOSFET Transistor; 6 A; 8 V; 3-Pin TO-236
***enic
8V 6A 2.5W 30m´Î@4.5V5.3A 800mV@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
***nell
MOSFET, P-CH, 8V, 6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.025ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:2.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Part # Mfg. Description Stock Price
SI2329DS-T1-GE3
DISTI # V72:2272_07433101		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R
RoHS: Compliant		111
  • 100:$0.4330
  • 25:$0.5115
  • 10:$0.6251
  • 1:$0.7690
SI2329DS-T1-GE3
DISTI # V36:1790_07433101		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000000:$0.2454
  • 1500000:$0.2456
  • 300000:$0.2560
  • 30000:$0.2716
  • 3000:$0.2741
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 8V 6A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		9053In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 8V 6A SOT-23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		9053In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 8V 6A SOT-23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		9000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SI2329DS-T1-GE3
DISTI # 32435712		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R
RoHS: Compliant		111
  • 31:$0.7690
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 150000:$0.2723
  • 75000:$0.2769
  • 30000:$0.2817
  • 15000:$0.2918
  • 9000:$0.3026
  • 6000:$0.3142
  • 3000:$0.3268
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R (Alt: SI2329DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1899
  • 18000:€0.2049
  • 12000:€0.2219
  • 6000:€0.2579
  • 3000:€0.3779
SI2329DS-T1-GE3
DISTI # SI2329DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2329DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SI2329DS-T1-GE3
    DISTI # 63W4143    		Vishay IntertechnologiesMOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV RoHS Compliant: Yes32256
    • 1000:$0.2850
    • 500:$0.3350
    • 100:$0.3960
    • 50:$0.4320
    • 25:$0.4690
    • 10:$0.5050
    • 1:$0.6210
    SI2329DS-T1-GE3
    DISTI # 70616155    		Vishay SiliconixSI2329DS-T1-GE3 P-channel MOSFET Transistor,6 A,8 V,3-Pin TO-236
    RoHS: Compliant    		0
    • 300:$0.4900
    • 600:$0.4800
    • 1500:$0.4700
    • 3000:$0.4500
    • 7500:$0.4200
    SI2329DS-T1-GE3
    DISTI # 78-SI2329DS-T1-GE3    		Vishay IntertechnologiesMOSFET -8V Vds 5V Vgs SOT-23
    RoHS: Compliant    		20267
    • 1:$0.5900
    • 10:$0.4780
    • 100:$0.3630
    • 500:$0.3000
    • 1000:$0.2400
    • 3000:$0.2170
    • 6000:$0.2020
    • 9000:$0.1950
    SI2329DS-T1-GE3
    DISTI # 8123114P    		Vishay IntertechnologiesTRANS MOSFET P-CH 8V 5.3A 3-PIN, RL7800
    • 3000:£0.2160
    • 1500:£0.2190
    • 600:£0.2500
    • 300:£0.3020
    SI2329DS-T1-GE3Vishay Intertechnologies 2934
      SI2329DS-T1-GE3
      DISTI # 2283643      		Vishay IntertechnologiesMOSFET, P-CH, 8V, 6A, SOT23
      RoHS: Compliant      		31934
      • 500:$0.4520
      • 100:$0.5490
      • 10:$0.7220
      • 1:$0.9040
      SI2329DS-T1-GE3
      DISTI # 2283643      		Vishay IntertechnologiesMOSFET, P-CH, 8V, 6A, SOT2331531
      • 500:£0.2340
      • 250:£0.2590
      • 100:£0.2840
      • 10:£0.4150
      • 1:£0.5340
      SI2329DS-T1-GE3Vishay IntertechnologiesMOSFET -8V Vds 5V Vgs SOT-23
      RoHS: Compliant      		Americas -
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        Availability
        Stock:
        20
        On Order:
        2003
        Enter Quantity:
        Current price of SI2329DS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.59
        $0.59
        10
        $0.48
        $4.78
        100
        $0.36
        $36.30
        500
        $0.30
        $150.00
        1000
        $0.24
        $240.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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