IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
T
O
-
2
2
0
A
B
BT138Y-800E
4Q Triac
1 May 2015 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
Planar passivated sensitive gate four quadrant triac in an internally insulated SOT78D
(TO-220AB) plastic package intended for use in general purpose bidirectional switching
and phase control applications. This sensitive gate "series E" triac can be interfaced
directly to microcontrollers, logic integrated circuits and other low power gate trigger
circuits. The internally insulated mounting base gives good thermal performance
combined with ease of handling and assembly by the user.
2. Features and benefits
2500 V RMS isolation voltage capability
Direct interfacing to logic level ICs
Direct interfacing to low power gate drivers and microcontrollers
High blocking voltage capability
Industry standard TO-220 package for ease of handling
Isolated mounting base
Planar passivated for voltage ruggedness and reliability
Sensitive gate
Triggering in all four quadrants
3. Applications
230 V lamp dimmers
General-purpose switching and phase control
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
repetitive peak off-
state voltage
- - 800 V
I
TSM
non-repetitive peak on-
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- - 95 A
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 85 °C; Fig. 1;
Fig. 2; Fig. 3
- - 12 A
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- - 10 mA
NXP Semiconductors
BT138Y-800E
4Q Triac
BT138Y-800E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 1 May 2015 2 / 13
Symbol Parameter Conditions Min Typ Max Unit
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- - 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C; Fig. 7
- - 10 mA
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- - 25 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
1 2
mb
3
TO-220AB (SOT78D)
sym051
T1
G
T2
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BT138Y-800E TO-220AB plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
SOT78D

BT138Y-800E,127

Mfr. #:
Manufacturer:
WeEn Semiconductors
Description:
Triacs Thyristor TRIAC 800V 105A 3-Pin (3+Tab)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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