NXP Semiconductors
BT138Y-800E
4Q Triac
BT138Y-800E All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 1 May 2015 3 / 13
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
repetitive peak off-state voltage - 800 V
I
T(RMS)
RMS on-state current full sine wave; T
mb
≤ 85 °C; Fig. 1;
Fig. 2; Fig. 3
- 12 A
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms; Fig. 4; Fig. 5
- 95 AI
TSM
non-repetitive peak on-state
current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
- 105 A
I
2
t
I2t for fusing t
p
= 10 ms; SIN - 45
A
2
s
I
G
= 20 mA; T2+ G+ - 50 A/µs
I
G
= 20 mA; T2+ G- - 50 A/µs
I
G
= 50 mA; T2- G+ - 10 A/µs
dI
T
/dt rate of rise of on-state current
I
G
= 20 mA; T2- G- - 50 A/µs
I
GM
peak gate current - 2 A
P
GM
peak gate power - 5 W
P
G(AV)
average gate power over any 20 ms period - 0.5 W
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 125 °C
003aac230
0
10
20
30
10
-2
10
-1
1 10
surge duration (s)
I
T(RMS)
(A)
f = 50 Hz; T
mb
= 85 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
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0
5
10
15
-50 0 50 100 150
T
mb
(°C)
I
T(RMS)
(A)
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
