DG9411DL-T1-E3

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4
Document Number: 71347
S-72609-Rev. D, 24-Dec-07
Vishay Siliconix
DG9411
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. V
IN
= input voltage to perform proper function.
f. Guaranteed by 5 V leakage testing, not production tested.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS V+ = 5 V
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 5 V, ± 10 %
V
IN
= 0.8 or 2.4 V
e
Temp
a
Limits
- 40 to 85 °C
Unit Min
b
Typ
c
Max
b
Analog Switch
Analog Signal Range
d
V
NO
, V
NC
V
COM
Full 0 V+ V
Drain-Source On-Resistance
r
DS(on)
V+ = 4.5 V, V
D
= 3 V, I
S
= 10 mA
Room
Full
7
10
12
16
Ω
r
DS(on)
Flatness
d
r
DS(on)
Flatness
V+ = 2.5 V Room 2
Switch Off
Leakage Current
I
S(off)
V+ = 5.5 V, V
S
= 1 V/4.5 V, V
D
= 4.5 V/1 V
Room
Full
- 1.0
- 4.0
1.0
4.0
nA
I
D(off)
Room
Full
- 1.0
- 4.0
1.0
4.0
Channel-On
Leakage Current
I
D(on)
V+ = 5.5 V, V
S
= V
D
= 1 V/4.5 V
Room
Full
- 1.0
- 3.0
1.0
4.5
Digital Control
Input High Voltage
V
INH
Full 2.4
V
Input Low Voltage
V
INL
Full 0.8
Input Capacitance
C
in
Full 3 pF
Input Current
I
INL
or I
INH
V
IN
= 0 or V+
Full - 1 1 µA
Dynamic Characteristics
Tur n - On T im e
d
t
ON
V
D
or V
S
= 3 V, R
L
= 300 Ω, C
L
= 35 pF
Figure 1 and 2
Room
Full
911
15
ns
Turn-Off Time
d
t
OFF
Room
Full
57
9
Break-Before-Make Time
d
t
d
Room 1 4
Charge Injection
d
Q
INJ
C
L
= 1 nF, V
S
= 0 V, V
GEN
= 0 V, R
GEN
= 0 Ω,
Figure 3
Room 5 10 pC
Off-Isolation
d
OIRR
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz
Room - 73
dB
Crosstalk
d
X
TALK
Room - 70
Source-Off Capacitance
d
C
S(off)
V
IN
= 0 or V+, f = 1 MHz
Room 7
pF
Channel-On Capacitance
d
C
D(on)
Room 20
Drain-to-Source
Capacitance
d
C
DS(off)
Room 20
Power Supply
Power Supply Range V+ 4.5 5.5 V
Power Supply Current I+
V
IN
= 0 or V+
0.01 1.0 µA
Power Consumption
P
C
0.6 µW
Document Number: 71347
S-72609-Rev. D, 24-Dec-07
www.vishay.com
5
Vishay Siliconix
DG9411
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
r
DS(on)
vs. Analog and Power Voltage
Supply Current vs. Temperature
Leakage Current vs. Temperature
0
5
10
15
20
25
30
012345
V
D
- Analog Voltage (V)
V+ = 2.5 V
r
DS(on)
-
V+ = 3 V
V+ = 5 V
- 60 - 40 - 20 0 20 40 60 80 100 120 140
100
10
1
0.1
0.01
Temperature (°C)
I+ - Supply Current (nA)
V+ = 5 V
V
IN
= 0 V
V+ = 5 V
V
D
, V
S
= 5 V
I
D(off)
I
D(on)
Temperature (°C)
Leakage Current (pA)
100 K
10 K
1 K
10
100
1
- 50 - 25 0 25 50 75 100 125 150
r
DS(on)
vs. Analog Voltage and Temperature
Supply Current vs. Input Switching Frequency
Leakage vs. Analog Voltage
0
5
10
15
20
25
30
012345
V
D
- Analog Voltage (V)
V+ = 5 V
V+ = 2.5 V
r
DS(on)
- Drain-Source On-Resistance (Ω)
85 °C
25 °C
40 °C
25 °C
40 °C
85 °C
Input Switching Frequency (Hz)
1 K 10 K 100 K1001
I+ - Supply Current (nA)
10 mA
1 M 10 M10
1 mA
100 µA
10 µA
1 µA
100 pA
10 pA
1 pA
- 600
- 500
- 400
- 300
- 200
- 100
0
100
0123456
V+ = 5 V
V
D
, V
S
- Analog Voltage (V)
Leakage Current (pA)
I
D(off)
I
D(on)
I
S(off)
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Document Number: 71347
S-72609-Rev. D, 24-Dec-07
Vishay Siliconix
DG9411
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Switching Time vs. Temperature and
Supply Voltage
Input Switching Threshold vs. Supply Voltage
0
5
10
15
20
25
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V+ - Supply Voltage (V)
85 °C
25 °C
t
ON
, t
OFF
- Switching Time (nS)
t
ON
- 40 °C
25 °C
85 °C
40 °C
t
OFF
0.0
0.5
1.0
1.5
2.0
2.5
3.0
01234567
V+ - Supply Voltage (V)
V
T
- Threshold Voltage (V)
Crosstalk and Off Isolation vs.
Frequency
Insertion Loss vs. Frequency
0
20
40
60
80
100
Frequency (Hz)
Crosstalk
Off Isolation
OIRR, X
TALK
(dB)
10 K 100 K 1 M 10 M 100 M
V+ = 3 V
R
L
= 50 Ω
Frequency (Hz)
1 K
Insertion Loss (dB)
10 K 1 G
100 K 1 M 100 M10 M
0
- 1
- 2
- 3
- 4
- 5
- 6
V+ = 3 V
R
L
= 50 Ω
Charge Injection vs. Analog Voltage
- 6
- 4
- 2
0
2
4
6
0123456
V
D
- Analog Voltage (V)
V+ = 2.5 V
Charge Injection (pC)
V+ = 3 V
V+ = 5 V
C
L
= 1 nF

DG9411DL-T1-E3

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Manufacturer:
Vishay
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