NTD4808N, NVD4808N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
4 V
5.5 V to 10 V
10
0.020
30
0.002
0
60
1.5
1.2
0.9
0.6
1000
10000
05
30
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
5.5
10
6.5
7.6
6.8
6.0
5
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
−50 50250−25 75 125100
23
1510 305
3
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
50
T
J
= 150°C
T
J
= 125°C
40
0
80
45
T
J
= 25°C
20
10
3.2 V
1.8
100
4
90
1
610
8.4
40
0.010
50
3 V
4.5 V
3.4 V
3.6 V
3.8 V
100
40
10
20
60
80
70
30
70
20
60
10
50
I
D
= 30 A
T
J
= 25°C
789
6.4
7.2
8.0
9.2
8.8
25 35
45
55
V
GS
= 11.5 V
150
0.1
T
J
= 25°C
9.6
7.5 8.5 9.5 10.5 11 11.5
0.004
0.006
0.008
0.018
0.016
0.014
0.012
2015
1.4
1.1
0.8
1.7
1.3
1.0
0.7
1.6
25
1
T
J
= 25°C
