DD350N12KHPSA1

Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD350N
Date of Publication 2018-07-30
Revision 3.2
1/10
Seite/page
V
DRM
/ V
RRM
1800 V
I
TAVM
350 A (T
C
=100 °C)
I
TSM
13000 A
V
T0
0,75 V
r
T
0,4 mΩ
R
thJC
0,124 K/W
Base plate
50 mm
For type designation please refer to actual
short form catalog
http://www.ifbip.com/catalog
Features
Pressure contact technology for high reliability
Advanced Medium Power Technology (AMPT)
Industrial standard package
Electrically insulated base plate
Typical Applications
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
content of customer DMX code
DMX code
DMX code
digit
digit quantity
serial number
1..5
5
SAP material number
6..12
7
Internal production order number
13..20
8
datecode (production year)
21..22
2
datecode (production week)
23..24
2
www.ifbip.com
support@infineon-bip.com
1 2 3
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD350N
Date of Publication 2018-07-30
Revision 3.2
2/10
Seite/page
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
DD350N
Periodische Spitzensperrspannung
repetitive peak reverse voltages
T
vj
= -40°C... T
vj max
V
RRM
1200
1600
1400
1800
V
V
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
T
vj
= +25°C... T
vj max
V
RSM
1300
1700
1500
1900
V
V
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
I
FRMSM
550
A
Dauergrenzstrom
average on-state current
T
C
= 100°C
I
FAVM
350
A
Stoßstrom-Grenzwert
surge current
T
vj
= 25°C, t
P
= 10ms
T
vj
= T
vj max
, t
P
= 10ms
I
FSM
13000
11000
A
A
Grenzlastintegral
I²t-value
T
vj
= 25°C, t
P
= 10ms
T
vj
= T
vj max
, t
P
= 10ms
I²t
845000
605000
A²s
A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
T
vj
= T
vj max
, i
F
= 1000A
v
F
max.
1,28
V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
max.
0,75
V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
max.
0,4
mΩ
Sperrstrom
reverse current
T
vj
= T
vj max
, v
R
= V
RRM
i
R
max.
30
mA
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50Hz, t = 1 sec
RMS, f = 50Hz, t = 1 min
V
ISOL
3,6
3,0
kV
kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module, Θ = 180° sin
pro Zweig / per arm, Θ = 180° sin
pro Modul / per Module, DC
pro Zweig / per arm, DC
R
thJC
max.
max.
max.
max.
0,065
0,130
0,062
0,124
K/W
K/W
K/W
K/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
pro Zweig / per arm
R
thCH
max.
max.
0,02
0,04
K/W
K/W
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
T
vj max
150
°C
Betriebstemperatur
operating temperature
T
c op
- 40...+150
°C
Lagertemperatur
storage temperature
T
stg
- 40...+150
°C
prepared by:
HR
date of publication:
2018-07-30
approved by:
ML
revision:
3.2
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DD350N
Date of Publication 2018-07-30
Revision 3.2
3/10
Seite/page
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see annex
Seite 3
page 3
Si-Element mit Druckkontakt
Si-pellet with pressure contact
Innere Isolation
internal insulation
Basisisolierung (Schutzklasse 1, EN 61140)
Basic insulation (class 1, IEC 61140)
AlN
Anzugsdrehmoment für mechanische Anschlüsse
mounting torque
Toleranz ±15%
M1
6
Nm
Anzugsdrehmoment für elektrische Anschlüsse
terminal connection torque
Toleranz ±10%
M2
12
Nm
Gewicht
weight
typ.
800
g
Kriechstrecke
creepage distance
17
mm
Schwingfestigkeit
vibration resistance
f = 50Hz
50
m/
file-No.
E 83335

DD350N12KHPSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
DIODE MODULE GP 1200V 350A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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