BSS119 E7978

P1-P3 P4-P6 P7-P8

2006-12-01

Page 1

Rev. 1.

3

BSS119

SIPMOS



Small-Signal-Transistor

Product Summary

V

DS

100 V

R

DS(on)

6 Ω

I

D

0.17 A

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

PG-SOT23

1

2

3

VPS05161

Gate

pin1

Drain

pin 3

Source

pin 2

Marking

sSH

Type Package Pb-free Tape and Reel Information

BSS119

PG-SOT23 Yes

L6327: 3000 pcs/reel

Maximum Ratings, at

T

j

= 25 °C, unless otherwise specified

Parameter

Symbol Value

Unit

Continuous drain current

T

A

=25°C

T

A

=70°C

I

D

0.17

0.13

A

Pulsed drain current

T

A

=25°C

I

D puls

0.68

Reverse diode dv/dt

I

S

=0.17A, V

DS

=80V, di/dt=200A/µs, T

jmax

=150°C

dv/dt

6 kV/µs

Gate source voltage

V

GS

±20

V

Power dissipation

T

A

=25°C

P

tot

0.36 W

Operating and storage temperature T

j

,

T

stg

-55... +150

°C

IEC climatic category; DIN IEC 68-1 55/150/56

2006-12-01

Page 2

Rev. 1.3

BSS119

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - ambient

at minimal footprint

R

thJS

- - 350 K/W

Electrical Characteristics, at

T

j

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

V

GS

=0, I

D

=250µA

V

(BR)DSS

100 - - V

Gate threshold voltage,

V

GS

=

V

DS

I

D

=50µA

V

GS(th)

1.3 1.8 2.3

Zero gate voltage drain current

V

DS

=100V, V

GS

=0, T

j

=25°C

V

DS

=100V, V

GS

=0, T

j

=150°C

I

DSS

-

-

0.05

0.5

0.1

5

µA

Gate-source leakage current

V

GS

=20V, V

DS

=0

I

GSS

- 10 100 nA

Drain-source on-state resistance

V

GS

=4.5V, I

D

=0.13 A

R

DS(on)

- 4.9 10

Ω

Drain-source on-state resistance

V

GS

=10V, I

D

=0.17A

R

DS(on)

- 3.4 6

2006-12-01

Page 3

Rev. 1.3

BSS119

Electrical Characteristics, at

T

j

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

fs

V

DS

≥2*I

D

*R

DS(on)max

,

I

D

=0.13A

0.08 0.17 - S

Input capacitance C

iss

V

GS

=0, V

DS

=25V,

f=1MHz

- 60 78 pF

Output capacitance C

oss

- 8.6 11.2

Reverse transfer capacitance C

rss

- 3.1 4.1

Turn-on delay time t

d(on)

V

DD

=50V, V

GS

=10V,

I

D

=0.17A, R

G

=6Ω

- 2.7 4 ns

Rise time t

r

- 3.1 4.6

Turn-off delay time t

d(off)

- 9.3 14

Fall time t

f

- 27 40

Gate Charge Characteristics

Gate to source charge Q

gs

V

DD

=80V, I

D

=0.17A

- 0.08 0.12 nC

Gate to drain charge Q

gd

- 0.76 1.1

Gate charge total Q

g

V

DD

=80V, I

D

=0.17A,

V

GS

=0 to 10V

- 1.67 2.5

Gate plateau voltage V

(plateau)

V

DD

=80V, I

D

= 0.17 A

- 3.4 - V

Reverse Diode

Inverse diode continuous

forward current

I

S

T

A

=25°C

- - 0.17 A

Inv. diode direct current, pulsed

I

SM

- - 0.68

Inverse diode forward voltage V

SD

V

GS

=0, I

F

= I

S

- 0.8 1.2 V

Reverse recovery time t

rr

V

R

=50V, I

F

=

l

S

,

di

F

/dt=100A/µs

- 21.7 32.5 ns

Reverse recovery charge Q

rr

- 10 15 nC

P1-P3 P4-P6 P7-P8

BSS119 E7978

Mfr. #:

Buy BSS119 E7978

Manufacturer:

Infineon Technologies

Description:

MOSFET N-CH 100V 170MA SOT-23

Lifecycle:

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