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BSS119 E7978

P1-P3P4-P6P7-P8
2006-12-01
Page 4
Rev. 1.3
BSS119
1 Power dissipation
P
tot
= f (
T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38
BSS119
P
tot
2 Drain current
I
D
= f (
T
A
)
parameter: V
GS
≥ 10 V
0 20 40 60 80 100 120
°C
160
T
A
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
A
0.18
BSS119
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 ,
T
A
= 25 °C
10
0
10
1
10
2
10
3
V
V
DS
-3
10
-2
10
-1
10
0
10
1
10
A
BSS119
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
t
p
= 240.0µs
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W
BSS119
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2006-12-01
Page 5
Rev. 1.3
BSS119
5 Typ. output characteristic
I
D
= f (
V
DS
)
parameter: T
j
= 25 °C, V
GS
0 0.5 1 1.5 2
V
3
V
DS
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
A
0.34
I
D
10V
7V
6V
5V
4.8V
4.6V
4V
3.8V
3.4V
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: T
j
= 25 °C,
V
GS
0 0.04 0.08 0.12 0.16 0.2 0.24 0.28
A
0.34
I
D
0
1
2
3
4
5
6
7
8
9
10
Ω
12
R
DS(on)
3.4V
3.8V
4V
4.6V
4.8V
5V
6V
7V
10V
7 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
≥ 2 x I
D
x R
DS(on)max
parameter: T
j
= 25 °C
0 0.8 1.6 2.4 3.2
V
4.4
V
GS
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
A
0.34
I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 °C
0 0.04 0.08 0.12 0.16 0.2 0.24 0.28
A
0.34
I
D
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.22
0.24
S
0.3
g
fs
2006-12-01
Page 6
Rev. 1.3
BSS119
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 0.17 A,
V
GS
= 10 V
-60 -20 20 60 100
°C
180
T
j
0
2
4
6
8
10
12
14
16
18
20
Ω
24
BSS119
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
;
I
D
=50µA
-60 -20 20 60 100
°C
160
T
j
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
V
2.6
V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (
V
DS
)
parameter:
V
GS
=0, f=1 MHz, T
j
= 25 °C
0 5 10 15 20
V
30
V
DS
0
10
1
10
2
10
3
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
0 0.4 0.8 1.2 1.6 2 2.4
V
3
V
SD
-3
10
-2
10
-1
10
0
10
A
BSS119
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
P1-P3P4-P6P7-P8

BSS119 E7978

Mfr. #:
Buy BSS119 E7978
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 170MA SOT-23
Lifecycle:
New from this manufacturer.
Delivery:
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