FDC6000NZ Datasheet FDC6000NZ, FDC6000NZ_F077 | P1-P3

June 2004

2004 Fairchild Semiconductor Corporation

FDC6000NZ Rev E1 (W)

FDC6000NZ

Dual N-Channel 2.5V Specified PowerTrench



MOSFET

General Description

This N-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild's Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6,

the R

DS(ON)

and thermal properties of the device are

optimized for battery power management applications.

Applications

• Battery management/Charger Application

• Load switch

Features

• 6.5 A, 20 V R

DS(ON)

= 20 mΩ @ V

GS

= 4.5 V

R

DS(ON)

= 28 mΩ @ V

GS

= 2.5 V

• ESD protection diode (note 3)

• High performance trench technology for extremely

low R

DS(ON)

• FLMP SSOT-6 package: Enhanced thermal

performance in industry-standard package size

3

2

1

4

5

6

Bottom Drain Contact

MOSFET Maximum Ratings T

A

=25

o

C unless otherwise noted

Symbol Parameter Ratings Units

V

DSS

Drain-Source Voltage 20 V

V

GSS

Gate-Source Voltage

±12

V

I

D

Drain Current – Continuous (Note 1a) 7.3 A

– Pulsed 20

P

D

Power Dissipation for Dual Operation (Note 1a) 1.6 W

Power Dissipation for Single Operation (Note 1a) 1.8

(Note 1b)

1.2

T

J

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

R

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 68

°C/W

R

θJc

Thermal Resistance, Junction-to-Case

(Note 1a) 1

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.0NZ FDC6000NZ 7’’ 8mm 3000 units

FDC6000NZ

SuperSOT-6

TM

FLMP

G1

S1

S2

G2

S2

SuperSOT-6

TM

FLMP

G1

S1

S2

G2

S2

FDC6000NZ RevE1 (W)

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

Drain–Source Breakdown Voltage

V

GS

= 0 V, I

D

= 250 µA

20 V

∆BVDSS

∆T

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250 µA, Referenced to 25°C

14

mV/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 16 V, V

GS

= 0 V 1

µA

I

GSS

Gate–Body Leakage

V

GS

= ±12 V, V

DS

= 0 V

± 10 µA

On Characteristics (Note 2)

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= 250 µA

0.6 0.9 1.5 V

∆VGS(th)

∆T

J

Gate Threshold Voltage

Temperature Coefficient

I

D

= 250 µA, Referenced to 25°C

–4

mV/°C

R

DS(on)

Static Drain–Source

On–Resistance

V

GS

= 4.5 V, I

D

= 6.5 A

V

GS

= 4.0 V, I

D

= 6.4 A

V

GS

= 3.1 V, I

D

= 6.3 A

V

GS

= 2.5 V, I

D

= 5.5 A

V

GS

= 4.5 V, I

D

= 6.5A, T

J

=125°C

16.5

16.8

19.2

22.5

22.8

20

21

24

28

30

mΩ

g

FS

Forward Transconductance V

DS

= 5 V, I

D

= 6.5 A 30 S

Dynamic Characteristics

C

iss

Input Capacitance

V

DS

= 10 V, V

GS

= 0 V,

f = 1.0 MHz

840 pF

C

oss

Output Capacitance 210 pF

C

rss

Reverse Transfer Capacitance

100 pF

R

G

Gate Resistance V

GS

= 15 mV, f = 1.0 MHz 2.3

Ω

Switching Characteristics (Note 2)

t

d(on)

Turn–On Delay Time

V

DD

= 10 V, I

D

= 1 A,

V

GS

= 4.5 V, R

GEN

= 6 Ω

10 20 ns

t

r

Turn–On Rise Time 15 27 ns

t

d(off)

Turn–Off Delay Time 18 32 ns

t

f

Turn–Off Fall Time

9 18 ns

Q

g

Total Gate Charge

V

DS

= 10 V, I

D

= 6.5 A,

V

GS

= 4.5 V

8 11 nC

Q

gs

Gate–Source Charge 1.5 nC

Q

gd

Gate–Drain Charge

2.1 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

Maximum Continuous Drain–Source Diode Forward Current 1.25 A

V

SD

Drain–Source Diode Forward Voltage V

GS

= 0 V, I

S

= 1.25A (Note 2) 0.7 1.2 V

FDC6000NZ

FDC6000NZ RevE1 (W)

Electrical Characteristics T

A

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Drain–Source Diode Characteristics and Maximum Ratings

t

rr

Diode Reverse Recovery Time I

F

= 6.5 A, d

iF

/d

t

= 100 A/µs 16 nS

Q

rr

Diode Reverse Recovery Charge 4.3 nC

NOTES:

1. R

θJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the

drain pins. R

θJC

is guaranteed by design while R

θCA

is determined by the user's board design.

a) 68°C/W when

mounted on a 1in

2

pad

of 2 oz copper (Single

Operation).

b) 102°C/W when mounted

on a minimum pad of 2 oz

copper (Single Operation).

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4. Electrical characterization and datasheet limits was based on a single source configuration (pin 2 & 5 no connection).

FDC6000NZ

FDC6000NZ

FDC6000NZ

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