FDC6000NZ Datasheet FDC6000NZ, FDC6000NZ_F077 | P4-P6

FDC6000NZ RevE1 (W)

Dimensional Outline and Pad Layout

Bottom View

Top View

Recommended Landing Pattern

For Common Drain Configuration

Recommended Landing Pattern

For Standard Dual Configuration

FDC6000NZ

FDC6000NZ Rev E1(W)

Typical Characteristics

0

5

10

15

20

00.511.522.5

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

1.8V

3.5V

V

GS

= 4.5V

2.5V

2.0V

3.0V

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0 5 10 15 20

I

D

, DRAIN CURRENT (A)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

V

GS

= 1.8V

3.5V

4.5V

3.0V

2.5V

2.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.6

0.8

1

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

, JUNCTION TEMPERATURE (

o

C)

R

DS(ON)

, NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

I

D

= 6.5A

V

GS

= 4.5V

0.012

0.017

0.022

0.027

0.032

0.037

0.042

0.047

0.052

0.057

0.062

12345

V

GS

, GATE TO SOURCE VOLTAGE (V)

R

DS(ON)

, ON-RESISTANCE (OHM)

I

D

= 3.3 A

T

A

= 125

o

C

T

A

= 25

o

C

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

0

5

10

15

20

25

30

11.522.5

V

GS

, GATE TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

T

A

= -55

o

C

25

o

C

125

o

C

V

DS

= 5V

0.0001

0.001

0.01

0.1

1

10

100

0 0.2 0.4 0.6 0.8 1 1.2

V

SD

, BODY DIODE FORWARD VOLTAGE (V)

I

S

, REVERSE DRAIN CURRENT (A)

T

A

= 125

o

C

25

o

C

-55

o

C

V

GS

= 0V

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDC6000NZ

FDC6000NZ Rev E1(W)

Typical Characteristics

0

1

2

3

4

5

0246810

Q

g

, GATE CHARGE (nC)

V

GS

, GATE-SOURCE VOLTAGE (V)

I

D

= 6.5A

V

DS

= 5V

15V

10V

0

200

400

600

800

1000

1200

0 5 10 15 20

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

C

ISS

C

RSS

C

OSS

f = 1MHz

V

GS

= 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1 1 10 100

V

DS

, DRAIN-SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

DC

100ms

R

DS(ON)

LIMIT

V

GS

= 4.5V

SINGLE PULSE

R

θJA

= 102

o

C/W

T

A

= 25

o

C

10ms

1ms

1s

100µs

10s

0

10

20

30

40

50

0.0001 0.001 0.01 0.1 1 10 100 1000

t

1

, TIME (sec)

P(pk), PEAK TRANSIENT POWER (W)

SINGLE PULSE

R

θJA

= 102°C/W

T

A

= 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000

t

1

, TIME (sec)

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

R

θ

JA

(t) = r(t) * R

θ

JA

R

θ

JA

= 102 °C/W

T

J

- T

A

= P * R

θ

JA

(t)

Duty Cycle, D = t

1

/ t

2

P(pk)

t

1

t

2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDC6000NZ

FDC6000NZ

FDC6000NZ

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