13
LT1307/LT1307B
1307fa
tions where small size is not critical, Panasonic HFQ series
aluminum electrolytic capacitors have been found to per-
form well.
Table 2. Vendor Telephone Numbers
VENDOR COMPONENTS TELEPHONE
Coilcraft Inductors (708) 639-6400
Marcon Capacitors (708) 913-9980
Murata-Erie Inductors, Capacitors (404) 436-1300
Sumida Inductors (847) 956-0666
Tokin Capacitors (408) 432-8020
AVX Capacitors (207) 282-5111
Sprague Capacitors (603) 224-1961
Coiltronics Inductors (407) 241-7876
Diodes
Most of the application circuits on this data sheet specify
the Motorola MBR0520L surface mount Schottky diode.
This 0.5A, low drop diode complements the LT1307 quite
well. In lower current applications, a 1N4148 can be used,
although efficiency will suffer due to the higher forward
drop. This effect is particularly noticeable at low output
voltages. For higher voltage output applications, such as
LCD bias generators, the extra drop is a small percentage
of the output voltage so the efficiency penalty is small. The
low cost of the 1N4148 makes it attractive wherever it can
be used. In through hole applications the 1N5818 is the all
around best choice.
SHUTDOWN PIN
The LT1307 has a Shutdown pin (SHDN) that must be
grounded to shut the device down or tied to a voltage equal
or greater than V
IN
to operate. The shutdown circuit is
shown in Figure 13.
Note that allowing SHDN to float turns on both the start-
up current (Q2) and the shutdown current (Q3) for V
IN
>
2V
BE
. The LT1307 doesn’t know what to do in this situation
and behaves erratically. SHDN voltage above V
IN
is al-
lowed. This merely reverse-biases Q3’s base emitter junc-
tion, a benign condition.
Figure 13. Shutdown Circuit
V
IN
Q3
SHUTDOWN
CURRENT
R2
400k
200k
Q2
1307 F13
Q1
START-UP
CURRENT
SHDN
LOW-BATTERY DETECTOR
The LT1307’s low-battery detector is a simple PNP input
gain stage with an open collector NPN output. The nega-
tive input of the gain stage is tied internally to a 200mV
±5% reference. The positive input is the LBI pin. Arrange-
ment as a low-battery detector is straightforward. Figure
14 details hookup. R1 and R2 need only be low enough in
value so that the bias current of the LBI pin doesn’t cause
large errors. For R2, 100k is adequate. The 200mV refer-
ence can also be accessed as shown in Figure 15.
LBO
LBI
TO PROCESSOR
R1
1M
R2
100k
V
IN
LT1307
1307 F14
3.3V
GND
200mV
INTERNAL
REFERENCE
+
R1 =
V
LB
– 200mV
2µA
Figure 14. Setting Low-Battery Detector Trip Point
V
IN
LT1307
LBI
LBO
200k
10µF
GND
10k
1307 F15
2N3906
V
REF
200mV
+
Figure 15. Accessing 200mV Reference
APPLICATIO S I FOR ATIO
WUUU
14
LT1307/LT1307B
1307fa
REVERSE BATTERY CONSIDERATIONS
The LT1307 is built on a junction-isolated bipolar process.
The p-type substrate is connected to the GND pin of the
LT1307. Substrate diodes, normally reverse-biased, are
present on the SW pin and the V
IN
pin as shown in Figure
16. When the battery polarity is reversed, these diodes
conduct, as illustrated in Figure 17. With a single AA or
AAA cell, several hundred milliamperes flow in the circuit.
The LT1307 can withstand this current without damage. In
laboratory tests, the LT1307 performed without degrada-
tion after sustaining polarity reversal for the life of a single
AA alkaline cell.
When using a 2- or 3-cell supply, an external protection
diode is recommended as shown in Figure 18. When the
battery polarity is reversed, the 1N4001 conducts, limiting
reverse voltage across the LT1307 to a single diode drop.
This arrangement will quickly deplete the cells’ energy, but
it does prevent the LT1307 from excessive power dissipa-
tion and potential damage.
Figure 18. 1N4001 Diode Protects LT1307 from Excessive Power
Dissipation When a 2- or 3-Cell Battery is Used
V
IN
SW
LT1307
1N4001
1307 F18
2 OR 3
CELLS
GND
V
IN
LT1307
1307 F16
GND
1 CELL
1.5V
D2
SW
D1
Q1
Figure 16. LT1307 Showing Internal Substrate Diodes D1 and D2.
In Normal Operation Diodes are Reverse-Biased
V
IN
LT1307
CURRENT
FLOW
1307 F17
GND
1 CELL
1.5V
D2
SW
D1
Q1
Figure 17. When Cell Is Reversed Current Flows through
D1 and D2
APPLICATIO S I FOR ATIO
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15
LT1307/LT1307B
1307fa
Externally Controlled Burst Mode Operation
This circuit overcomes the limitation of load-based
transitioning between Burst Mode operation and constant
switching mode by adding external control. If M1’s gate is
grounded by an external open-drain signal, the converter
functions normally in constant switching mode, delivering
3.3V. Output noise is low, however efficiency at loads less
than 1mA is poor due to the 1mA supply current of the
LT1307B. If M1’s gate is allowed to float, the low-battery
detector now drives the V
C
pin. R3 and R2 set the output
to 3V by allowing M1’s gate to go to V
OUT
until the output
voltage drops below 3V. R1 adds hysteresis, resulting in
low-frequency Burst Mode operation ripple voltage at the
output. By pulling the V
C
pin below a V
BE
, quiescent
current of the LT1307B drops to 60µA, resulting in accept-
able efficiency at loads in the 100µA range.
V
IN
V
C
SW
FB
LBO
LBI
LT1307B
L1
10µH
MBR0520
100k
2
CELLS
1nF
1µF
CERAMIC
1307 F19
GNDSHDN
C2*
10µF
CERAMIC
R3
698k
R4
1M
R2
49.9k
R5
590k
R1
10M
C1
100µF
V
OUT
3.3V
200mA
300k
V
OUT
M1
2N7002
GROUND = HIGH POWER/LOW NOISE
FLOAT = Burst Mode OPERATION
SHUTDOWN
3.0V IN LOW-POWER
Burst Mode OPERATION
C1 = AVX TPSC107K006R0150
L1 = COILCRAFT DO1608-103
SUMIDA CD43-100
C2 OPTIONAL: REDUCES OUTPUT
RIPPLE CAUSED BY C1'S ESR
*
+
0.2s/DIV 1307 F20
This photo details output voltage as the circuit is switched
between the two modes. Load current is 100µA in Burst
Mode operation; 10mA in constant switching mode.
This photo shows transient response in constant switch-
ing mode with a 10mA to 100mA stepped load. Output
ripple at the switching frequency can be reduced consid-
erably by adding a 10µF ceramic capacitor in parallel with
the 100µF tantalum.
10mA
100µA
I
L
V
OUT
500mV/DIV
2ms/DIV
1307 F21
V
OUT
100mV/DIV
100mA
10mA
I
L
TYPICAL APPLICATIO S
U

LT1307IS8#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators 1x Cell uP 600kHz PWM DC/DC Convs
Lifecycle:
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