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IXYH10N170CV1

P1-P3P4-P6P7-P7
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH10N170CV1
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
5
10
15
20
25
30
35
40
45
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
Ω
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 10A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 11. Maximum Transient Thermal Impedance (IGBT)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYH10N170CV1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10 20 30 40 50 60 70 80
R
G
- Ohms
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
T
J
= 150ºC , V
GE
= 15V
V
CE
= 850V
I
C
= 10A
I
C
= 20A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80
R
G
- Ohms
t
f i
- Nanoseconds
0
100
200
300
400
500
600
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 10A
I
C
= 20A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10 12 14 16 18 20 22 24 26 28 30
I
C
- Amperes
E
off
- MilliJoules
0
1
2
3
4
5
6
7
8
E
on
- MilliJoules
E
off
E
on
R
G
= 10
Ω
V
GE
= 15V
V
CE
= 850V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
1
2
3
4
5
6
E
on
- MilliJoules
E
off
E
on
R
G
= 10
Ω
V
GE
= 15V
V
CE
= 850V
I
C
= 10A
I
C
= 20A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
10 12 14 16 18 20 22 24 26 28 30
I
C
- Amperes
t
f i
- Nanoseconds
60
80
100
120
140
160
180
200
220
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
80
100
120
140
160
180
200
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 20A
I
C
= 10A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH10N170CV1
IXYS REF: IXY_10N170C(3T-AT653) 1-26-17
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
10
20
30
40
50
10 12 14 16 18 20 22 24 26 28 30
I
C
- Amperes
t
r i
- Nanoseconds
12
13
14
15
16
17
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
5
10
15
20
25
30
35
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
11
12
13
14
15
16
17
18
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 10
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 20A
I
C
= 10A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
10
20
30
40
50
60
10 20 30 40 50 60 70 80
R
G
- Ohms
t
r i
- Nanoseconds
10
15
20
25
30
35
40
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 150ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 10A
I
C
= 20A
P1-P3P4-P6P7-P7

IXYH10N170CV1

Mfr. #:
Buy IXYH10N170CV1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1700V/10A XPT IGBT w/ Diode
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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