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IXYH10N170CV1

P1-P3P4-P6P7-P7
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYH10N170CV1
Fig. 21. Diode Forward Characteristics
0
10
20
30
40
50
0123456
V
F
(V)
I
F
(A)
T
J
= 150ºC
T
J
= 25ºC
Fig. 22. Reverse Recovery Charge vs. -di
F
/dt
0.6
1.0
1.4
1.8
2.2
2.6
200 400 600 800 1000 1200 1400 1600
-di
F
/ dt (A/µs)
Q
RR
(µC)
I
F
= 20A
10A
15A
T
J
= 150ºC
V
R
= 1200V
Fig. 23. Reverse Recovery Current vs. -di
F
/dt
10
15
20
25
30
35
200 400 600 800 1000 1200 1400 1600
di
F
/dt (A/µs)
I
RR
(A)
10A
15A
I
F
= 20A
T
J
= 150ºC
V
R
= 1200V
Fig. 24. Reverse Recovery Time vs. -di
F
/dt
100
120
140
160
180
200
200 400 600 800 1000 1200 1400 1600
-di
F
/dt (A/µs)
t
RR
(ns)
10A
15A
I
F
= 20A
T
J
= 150ºC
V
R
= 1200V
Fig. 26. Maximum Transient Thermal Impedance
(Diode)
0.1
1
0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- K / W
Fig. 25. Dynamic Parameters Q
RR,
I
RR
vs.
Junction Temperature
0.6
0.7
0.8
0.9
1.0
1.1
0 20 40 60 80 100 120 140 160
T
J
(ºC)
K
F
K
F
I
RR
K
F
Q
RR
V
R
= 1200V
I
F
= 10A
-diF/dt = 400A/µs
P1-P3P4-P6P7-P7

IXYH10N170CV1

Mfr. #:
Buy IXYH10N170CV1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1700V/10A XPT IGBT w/ Diode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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