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IXFN73N30

P1-P3P4-P4
© 2001 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
IXFK IXFN
V
DSS
T
J
= 25°C to 150°C 300 300 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 300 300 V
V
GS
Continuous ±20 ±20 V
V
GSM
Transient ± 3 0 ± 3 0 V
I
D25
T
C
= 25°C 73 73 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
292 292 A
I
AR
T
C
= 25°C 40 40 A
E
AR
T
C
= 25°C 30 30 mJ
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 5 5 V/ns
T
J
≤ 150°C, R
G
= 2 W
P
D
T
C
= 25°C 500 520 W
T
J
-55 ... +150 ° C
T
JM
150 °C
T
stg
-55 ... +150 ° C
T
L
1.6 mm (0.063 in) from case for 10 s 300 - ° C
V
ISOL
50/60 Hz, RMS t = 1 min - 2500 V~
I
ISOL
≤ 1 mA t = 1 s - 3000 V~
M
d
Mounting torque 0.9/6 1.5/13 Nm/lb.in.
Terminal connection torque - 1.5/13 Nm/lb.in.
Weight 10 30 g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
l
International standard packages
l
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
l
miniBLOC with Aluminium nitride
isolation
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
l
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Synchronous rectification
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
Temperature and lighting controls
l
Low voltage relays
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA 300 V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA 2 4 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±200 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C 400 uA
V
GS
= 0 V T
J
= 125°C 2 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
45 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
TO-264 AA (IXFK)TO-264 AA (IXFK)
TO-264 AA (IXFK)TO-264 AA (IXFK)
TO-264 AA (IXFK)
S
G
D
G = Gate D = Drain
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
S
D
92805J (11/01)
miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)miniBLOC, SOT-227 B (IXFN)
miniBLOC, SOT-227 B (IXFN)
E153432 E153432
E153432 E153432
E153432
(TAB)
V
DSS
I
D25
R
DS(on)
IXFK 73 N 30 300 V 73 A 45 m
ΩΩ
ΩΩ
Ω
IXFN 73 N 30 300 V 73 A 45 m
ΩΩ
ΩΩ
Ω
t
rr
≤≤
≤≤
≤ 200 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 73N30
IXFN 73N30
TO-264 AA Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test 50 S
C
iss
9000 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1500 pF
C
rss
580 pF
t
d(on)
30 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
80 ns
t
d(off)
R
G
= 1 Ω (External), 100 ns
t
f
50 ns
Q
g(on)
360 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
60 nC
Q
gd
180 nC
R
thJC
TO-264 AA 0.25 K/W
R
thCK
TO-264 AA 0.15 K/W
R
thJC
miniBLOC, SOT-227 B 0.24 K/W
R
thCK
miniBLOC, SOT-227 B 0.05 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 73 A
I
SM
Repetitive; pulse width limited by T
JM
292 A
V
SD
I
F
= 100 A, V
GS
= 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
200 ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V 2 µC
I
RM
40 A
© 2001 IXYS All rights reserved
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
Fig. 3 R
DS(on)
vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
5V
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Normalized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
T
C
- Degrees C
-50-250 255075100125150
I
D
- Amperes
0
10
20
30
40
50
60
70
80
T
J
- Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0 40 80 120 160 200 240
R
DS(on)
- Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
GS
- Volts
012345678910
I
D
- Amperes
0
20
40
60
80
100
120
140
160
8V
7V
6V
I
D
= 40A
V
GS(th)
BV
DSS
V
GS
= 10V
V
GS
= 10V
V
GS
= 15V
V
DS
- Volts
02468101214
I
D
- Amperes
0
20
40
60
80
100
120
140
160
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
IXFK 73N30IXFK 73N30
IXFK 73N30IXFK 73N30
IXFK 73N30
IXFN 73N30IXFN 73N30
IXFN 73N30IXFN 73N30
IXFN 73N30
P1-P3P4-P4

IXFN73N30

Mfr. #:
Buy IXFN73N30
Manufacturer:
Littelfuse
Description:
MOSFET 300V 73A
Lifecycle:
New from this manufacturer.
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