IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 73N30
IXFN 73N30
Fig.10 Transient Thermal Impedance
Time - Seconds
0.001 0.01 0.1 1
Thermal Response - K/W
0.01
0.1
V
DS
- Volts
0 5 10 15 20 25
Capacitance - pF
0
1000
2000
3000
4000
5000
6000
7000
8000
9000
10000
C
rss
V
SD
- Volts
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
D
- Amperes
0
20
40
60
80
100
120
140
160
Gate Charge - nCoulombs
0 50 100 150 200 250 300 350 400
V
GE
- Volts
0
2
4
6
8
10
C
oss
V
DS
= 150V
I
D
= 42A
I
G
= 10mA
T
J
= 125°C
C
iss
f = 1MHz
V
DS
= 25V
T
J
= 25°C
Fig.7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves
Fig.9 Source Current vs. Source
to Drain Voltage
