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NTD4854N-1G

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 2
1 Publication Order Number:
NTD4854N/D
NTD4854N
Power MOSFET
25 V, 128 A, Single N--Channel, DPAK/IPAK
Features
• Trench Technology
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb--Free Devices
Applications
• VCORE Applications
• DC--DC Converters
• High/Low Side Switching
MAXIMUM RATINGS (T
J
=25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain--to--Source Voltage V
DSS
25 V
Gate--to--Source Voltage V
GS
±20 V
Continuous Drain
Current R
θ
JA
(Note 1)
Steady
State
T
A
=25°C
I
D
20.8
A
T
A
=85°C 16.1
Power Dissipation
R
θ
JA
(Note 1)
T
A
=25°C P
D
2.5 W
Continuous Drain
Current R
θ
JA
(Note 2)
T
A
=25°C
I
D
15.7
A
T
A
=85°C 12.2
Power Dissipation
R
θ
JA
(Note 2)
T
A
=25°C P
D
1.43 W
Continuous Drain
Current R
θ
JC
(Note 1)
T
C
=25°C
I
D
128
A
T
C
=85°C 99
Power Dissipation
R
θ
JC
(Note 1)
T
C
=25°C P
D
93.75 W
Pulsed Drain
Current
t
p
=10ms
T
A
=25°C I
DM
255 A
Current Limited by Package T
A
=25°C I
DmaxPkg
45 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
-- 5 5 t o
+175
°C
Source Current (Body Diode) I
S
78 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain--to--Source Avalanche
Energy (T
J
=25°C, V
DD
=50V,V
GS
=10V,
I
L
=26A
pk
,L=1.0mH,R
G
=25Ω)
EAS 338 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
25 V
3.6 mΩ @10V
128 A
4.7 mΩ @4.5V
G
S
N--CHANNEL MOSFET
D
See detailed ordering and shipping informationin the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
YWW
48
54NG
1
Gate
2
Drain
3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
YWW
48
54NG
YWW
48
54NG
Y = Year
WW = Work Week
4854N = Device Code
G = Pb--Free Package
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
CASE 369D
IPAK
(Straight Lead
DPAK)
1
2
3
4
1
2
3
4
CASE 369AC
3IPAK
(Straight Lead)
1
2
3
4
NTD4854N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction--to--Case (Drain)
R
θ
JC
1.6
°C/W
Junction--to--TAB (Drain)
R
θ
JC--TAB
3.5
Junction--to--Ambient – Steady State (Note 1)
R
θ
JA
60
Junction--to--Ambient – Steady State (Note 2)
R
θ
JA
105
1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the m inimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
=25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
V
(BR)DSS
V
GS
=0V,I
D
= 250 mA
25 V
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
23
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
=0V,
V
DS
=20V
T
J
=25°C 1.0
mA
T
J
= 125°C 10
Gate--to--Source Leakage Current I
GSS
V
DS
=0V,V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS(TH)
V
GS
=V
DS
,I
D
= 250 mA
1.45 2.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
6.0
mV/°C
Drain--to--Source On Resistance R
DS(on)
V
GS
=10V I
D
=30A 2.9 3.6
mΩ
V
GS
=4.5V I
D
=30A 3.6 4.7
Forward Transconductance g
FS
V
DS
=1.5V,I
D
=15A 122 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
=0V,f=1.0MHz,V
DS
=12V
4600
pF
Output Capacitance C
OSS
1100
Reverse Transfer Capacitance C
RSS
578
Total Gate Charge Q
G(TOT)
V
GS
=4.5V,V
DS
=15V,I
D
=30A
32.8 49.2
nC
Threshold Gate Charge Q
G(TH)
3.7
Gate--to--Source Charge Q
GS
11.8
Gate--to--Drain Charge Q
GD
12.6
Total Gate Charge Q
G(TOT)
V
GS
=10V,V
DS
=15V,I
D
=30A 65 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
t
d(ON)
V
GS
=4.5V,V
DS
=15V,
I
D
=15A,R
G
=3.0Ω
22.6
ns
Rise Time t
r
40.7
Turn--Off Delay Time t
d(OFF)
25
Fall Time t
f
17.6
Turn--On Delay Time t
d(ON)
V
GS
=11.5V,V
DS
=15V,
I
D
=15A,R
G
=3.0Ω
12.1
ns
Rise Time t
r
17.6
Turn--Off Delay Time t
d(OFF)
41
Fall Time t
f
8.5
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD4854N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
=25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
=0V,
I
S
=30A
T
J
=25°C 0.84 1.2
V
T
J
= 125°C 0.71
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
=30A
31.3
ns
Charge Time t
a
16
Discharge Time t
b
15.3
Reverse Recovery Charge Q
RR
20.2 nC
PACKAGE PARASITIC VALUES
Source Inductance
L
S
T
A
=25°C
2.49
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK L
D
1.88
Gate Inductance L
G
3.46
Gate Resistance R
G
0.6
Ω
3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P8

NTD4854N-1G

Mfr. #:
Buy NTD4854N-1G
Manufacturer:
ON Semiconductor
Description:
MOSFET PWR MSFT 25V 124A SINGLE N-CHNL
Lifecycle:
New from this manufacturer.
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