NTD4854N-1G

NTD4854N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
10 V
V
DS
, DRAIN --TO--SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 1. On--Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On--Resistance vs. Gate--to--Source
Voltage
V
GS
, GATE--TO--SOURCE VOLTAGE (VOLTS)
Figure 4. On--Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN--TO--SOURCE RESISTANCE (Ω)
R
DS(on)
, DRAIN--TO--SOURCE RESISTANCE (Ω)
Figure 5. On--Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain--to--Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN --TO--SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN--TO--SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
DS
10 V
T
J
=25°C
T
J
=--55°C
T
J
= 125°C
V
GS
=4.5V
V
GS
=0V
I
D
=30A
V
GS
=10V
T
J
= 150°C
T
J
= 125°C
T
J
=25°C
3.8 V
3.0 V
3.6 V
2.8 V
3.2 V
3.4 V
I
D
=30A
T
J
=25°C
V
GS
=11.5V
T
J
=25°C
0
20
40
60
80
100
120
140
012345
160
0
20
40
60
80
100
120
140
123 4 5
160
180
200
0.002
0.006
0.010
0.014
0.020
246 810
0.002
0.0035
19050 90 130 17030 70 110 150
0.0025
0.004
0.003
0.005
0.6
0.8
1.0
1.2
1.4
--50 0 50 100 150
1.6
1.8
--25 25 75 125 175
100
1000
510152025
100000
0.004
0.008
0.012
0.016
1
10
T
J
=25°C
0.018
357 911
0.0045
10000
NTD4854N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
010152.5
DRAIN--TO--SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
5
V
GS
=0V
T
J
=25°C
C
oss
C
iss
V
GS
Figure 8. Gate--To--Source and Drain-- To-- Source
Voltage vs. Total Charge
V
GS
, GATE--TO--SOURCE VOLTAGE (VOLTS)
Q
G
, TOTAL GATE CHARGE (nC)
I
D
=30A
V
DD
=15V
T
J
=25°C
Q
2
Q
1
Q
T
V
SD
, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
t, TIME (ns)
V
GS
=0V
Figure 10. Diode Forward Voltage vs. Current
t
r
t
d(off)
t
d(on)
t
f
V
DD
=10V
I
D
=15A
V
GS
=10V
T
J
=25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN --TO--SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
V
GS
=20V
SINGLE PULSE
T
C
=25°C
1ms
100 ms
10 ms
dc
10 ms
20
T
J
, JUNCTION TEMPERATURE (°C)
I
D
=26A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
EAS, SINGLE PULSE DRAIN--TO--SOURCE
AVALANCHE ENERGY (mJ)
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0406020 80
0
2
4
6
8
10
12
30 5010 70
1 10 100
1
10
100
1000
0.5 0.7
0
10
20
30
5
15
25
0.6 0.9
0.1 10 100
1
10
100
1000
0.1
1 25 125 175
80
120
160
40
0
75
280
320
360
240
200
100 15050
7.5 12.5 17.5
5500
6000
0.8
NTD4854N
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES
Figure 13. Thermal Response
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
t, TIME (ms)
0.1
1.0
0.01
0.1
0.2
0.02
D=0.5
0.05
0.01
SINGLE PULSE
R
θ
JC
(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
-- T
C
=P
(pk)
R
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
1.0E+00 1.0E+011.0E--011.0E--021.0E--031.0E--041.0E--05
ORDERING INFORMATION
Device Package Shipping
NTD4854NT4G DPAK
(Pb--Free)
2500 / Tape & Reel
NTD4854N--1G IPAK
(Pb--Free)
75 Units / Rail
NTD4854N--35G IPAK Trimmed Lead
(3.5 0.15 mm)
(Pb--Free)
75 Units / Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

NTD4854N-1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET PWR MSFT 25V 124A SINGLE N-CHNL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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