SIHJ6N65E-T1-GE3 Datasheet SIHJ6N65E-T1-GE3 | P1-P3

SiHJ6N65E

www.vishay.com

Vishay Siliconix

S16-0840-Rev. B, 09-May-16

1

Document Number: 91589

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R

on

x Q

g

• Low input capacitance (C

iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q

g

)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Consumer

- Adaptors

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

DD

= 120 V, starting T

J

= 25 °C, L = 28.2 mH, R

g

= 25 , I

AS

= 1.6 A.

c. I

SD

 I

D

, dI/dt = 100 A/μs, starting T

J

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) at T

J

max. 700

R

DS(on)

typ. () at 25 °C V

GS

= 10 V 0.755

Q

g

max. (nC) 32

Q

gs

(nC) 5

Q

gd

(nC) 7

Configuration Single

N-Channel MOSFET

G

D

S

PowerPAK

®

SO-8L

ORDERING INFORMATION

Package PowerPAK SO-8L

Lead (Pb)-free and Halogen-free SiHJ6N65E-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

650

V

Gate-Source Voltage V

GS

± 30

Continuous Drain Current (T

J

= 150 °C) V

GS

at 10 V

T

C

= 25 °C

I

D

5.6

AT

C

= 100 °C 3.6

Pulsed Drain Current

a

I

DM

12

Linear Derating Factor 0.76 W/°C

Single Pulse Avalanche Energy

b

E

AS

36 mJ

Maximum Power Dissipation P

D

74 W

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150 °C

Drain-Source Voltage Slope T

J

= 125 °C

dV/dt

70

V/ns

Reverse Diode dV/dt

c

9.4

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

52 65

°C/W

Maximum Junction-to-Case (Drain) R

thJC

1.2 1.7

SiHJ6N65E

www.vishay.com

Vishay Siliconix

S16-0840-Rev. B, 09-May-16

2

Document Number: 91589

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. C

oss(er)

is a fixed capacitance that gives the same energy as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

b. C

oss(tr)

is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 % to 80 % V

DSS

.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= 250 μA 650 - - V

V

DS

Temperature Coefficient V

DS

/T

J

Reference to 25 °C, I

D

= 1 mA - 0.8 - V/°C

Gate-Source Threshold Voltage (N) V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.0 - 4.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 20 V - - ± 100 nA

V

GS

= ± 30 V - - ± 1 μA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 650 V, V

GS

= 0 V - - 1

μA

V

DS

= 520 V, V

GS

= 0 V, T

J

= 125 °C - - 10

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 3 A - 0.755 0.868 

Forward Transconductance g

fs

V

DS

= 30 V, I

D

= 3 A - 1.8 - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 100 V,

f = 1 MHz

- 596 -

pF

Output Capacitance C

oss

-35-

Reverse Transfer Capacitance C

rss

-4-

Effective Output Capacitance, Energy

C

o(er)

V

DS

= 0 V to 520 V, V

GS

= 0 V

-26-

Effective Output Capacitance, Time

C

o(tr)

-90-

Total Gate Charge Q

g

V

GS

= 10 V I

D

= 3 A, V

DS

= 520 V

-1632

nC Gate-Source Charge Q

gs

-5-

Gate-Drain Charge Q

gd

-7-

Turn-On Delay Time t

d(on)

V

DD

= 520 V, I

D

= 3 A,

V

GS

= 10 V, R

g

= 9.1 

-1428

ns

Rise Time t

r

-1428

Turn-Off Delay Time t

d(off)

-2550

Fall Time t

f

-1734

Gate Input Resistance R

g

f = 1 MHz 0.4 0.8 1.6 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the 

integral reverse

p - n junction diode

--5.6

A

Pulsed Diode Forward Current I

SM

--12

Diode Forward Voltage V

SD

T

J

= 25 °C, I

S

= 3 A, V

GS

= 0 V - 0.9 1.2 V

Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= I

S

= 3 A,

dI/dt = 100 A/μs

, V

R

= 25 V

- 278 556 ns

Reverse Recovery Charge Q

rr

-2.14.2μC

Reverse Recovery Current I

RRM

-12-A

S

D

G

SiHJ6N65E

www.vishay.com

Vishay Siliconix

S16-0840-Rev. B, 09-May-16

3

Document Number: 91589

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - C

oss

and E

oss

vs. V

DS

0

3

6

9

12

15

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 25 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

2

4

6

8

0 5 10 15 20

I

D

, Drain-to-Source Current (A)

V

DS

, Drain-to-Source Voltage (V)

T

J

= 150 °C

TOP 15 V

14 V

13 V

12 V

11 V

10 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

0

3

6

9

12

15

05101520

I

D

, Drain-to-Source Current (A)

V

GS

, Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

V

DS

= 31 V

0

0.5

1.0

1.5

2.0

2.5

3.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

R

DS(on)

, Drain-to-Source On-Resistance

(Normalized)

T

J

, Junction Temperature (°C)

I

D

= 3 A

V

GS

= 10 V

1

10

100

1000

10 000

0 100 200 300 400 500 600

C, Capacitance (pF)

V

DS

, Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

V

GS

= 0 V, f = 1 MHz

C

iss

= C

gs

+ C

gd

, C

ds

shorted

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

10

100

1000

10 000

0 100 200 300 400 500 600

E

oss

(μJ)

C

oss

(pF)

V

DS

C

oss

E

oss

SIHJ6N65E-T1-GE3

SIHJ6N65E-T1-GE3

Products related to this Datasheet