SIHJ6N65E-T1-GE3

SiHJ6N65E
www.vishay.com
Vishay Siliconix
S16-0840-Rev. B, 09-May-16
7
Document Number: 91589
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 20 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91589
.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 V
a
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
dV/dt controlled by R
g
Driver same type as D.U.T.
I
SD
controlled by duty factor “D”
D.U.T. - device under test
D.U.T.
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD
Package Information
www.vishay.com
Vishay Siliconix
Revision: 07-Sep-15
1
Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PowerPAK
®
SO-8L Case Outline
for Al Parts
Package Information
www.vishay.com
Vishay Siliconix
Revision: 07-Sep-15
2
Document Number: 66934
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Millimeters will gover
DIM.
MILLIMETERS INCHES
MIN. NOM. MAX. MIN. NOM. MAX.
A 1.00 1.07 1.14 0.039 0.042 0.045
A1 0.00 - 0.127 0.00 - 0.005
b 0.33 0.41 0.48 0.013 0.016 0.019
b1 0.44 0.51 0.58 0.017 0.020 0.023
b2 4.80 4.90 5.00 0.189 0.193 0.197
b3 0.094 0.004
b4 0.47 0.019
c 0.20 0.25 0.30 0.008 0.010 0.012
D 5.00 5.13 5.25 0.197 0.202 0.207
D1 4.80 4.90 5.00 0.189 0.193 0.197
D2 3.86 3.96 4.06 0.152 0.156 0.160
D3 1.63 1.73 1.83 0.064 0.068 0.072
e 1.27 BSC 0.050 BSC
E 6.05 6.15 6.25 0.238 0.242 0.246
E1 4.27 4.37 4.47 0.168 0.172 0.176
E2 2.75 2.85 2.95 0.108 0.112 0.116
F - - 0.15 - - 0.006
L 0.62 0.72 0.82 0.024 0.028 0.032
L1 0.92 1.07 1.22 0.036 0.042 0.048
K 0.51 0.020
W 0.23 0.009
W1 0.41 0.016
W2 2.82 0.111
W3 2.96 0.117
q - 10° - 10°
ECN: C15-1203-Rev. A, 07-Sep-15
DWG: 6044

SIHJ6N65E-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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