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AUIRG4PH50S

P1-P3P4-P6P7-P9P10-P11
V
CES
= 1200V
I
C
= 81A@ T
C
= 100°C
V
CE(on)
typ. = 1.47V@ 33A
G
C
E
Gate Collector Emitter
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
*Qualification standards can be found at http://www.irf.com/
E
C
G
n-channel
AUTOMOTIVE GRADE
AUIRG4PH50S
Features
• Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified *
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
INSULATED GATE BIPOLAR TRANSISTOR
TO-247AC
1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
Form Quantity
AUIRG4PH50S TO-247AC Tube 25 AUIRG4PH50S
Standard Pack
Base part number Complete Part NumberPackage Type
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 1200 V
I
C
@ T
C
= 25°C Continuous Collector Current
141
I
C
@ T
C
= 100°C Continuous Collector Current 81
I
CM
Pulse Collector Current, V
GE
= 15V 99
I
LM
Clamped Inductive Load Current, V
GE
= 20V 99
V
GE
Continuous Gate-to-Emitter Voltage ±20
Transient Gate-to-Emitter Voltage ±30
P
D
@ T
C
= 25°C Maximum Power Dissipation 543
P
D
@ T
C
= 100°C Maximum Power Dissipation 217
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1N·m)
Thermal Resistance
Parameter
Min. Typ. Max. Units
R
θ
JC
(IGBT)
Thermal Resistance Junction-to-Case (IGBT)
––– ––– 0.23
R
θ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
R
θ
JA
Thermal Resistance, Junction-to-Ambient
––– 40 –––
-55 to +150
V
W
°C/W
A
2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 400μH, R
G
= 50Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current limitations arising
from heating of the device leads may occur with some lead mounting arrangements.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V
(BR) CES
Collector-to-Emitter Breakdown Voltage 1200 — — V V
GE
= 0V, I
C
= 250μA
Δ
V
(BR)CES
/
Δ
T
J
Temperature Coeff. of Breakdown Voltage — 1.2 — V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
— 1.47 1.7 I
C
= 33A, V
GE
= 15V, T
J
= 25°C
—1.55— I
C
= 33A, V
GE
= 15V, T
J
= 150°C
V
GE(t h)
Gate Threshold Voltage 3.0 — 6.0 V V
CE
= V
GE
, I
C
= 250μA
Δ
V
GE(th)
/
Δ
TJ Threshold Voltage temp. coefficient — -11 — mV/°C V
CE
= V
GE
, I
C
= 250μA (25°C - 150°C)
gfe Forward Transconductance — 30 — S V
CE
= 50V, I
C
= 33A, PW = 20μs
I
CES
Collector-to-Emitter Leakage Current — — 250 V
GE
= 0V, V
CE
= 1200V, T
J
= 25°C
— — 1000 V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Q
g
Total Gate Charge (turn-on) — 151 227 I
C
= 33A
Q
ge
Gate-to-Emitter Charge (turn-on) — 26 39 nC V
GE
= 15V
Q
gc
Gate-to-Collector Charge (turn-on) — 62 93 V
CC
= 600V
I
C
= 33A, V
CC
= 600V, V
GE
= 15V
mJ R
G
= 5
Ω
, L = 400μH, T
J
= 25°C
Energy losses include tail
t
d(off )
Turn-Off delay time — 485 616 I
C
= 33A, V
CC
= 600V, V
GE
= 15V
t
f
Fall time — 1193 1371 R
G
= 5
Ω
, L = 400μH, T
J
= 25°C
I
C
= 33A, V
CC
= 600V, V
GE
= 15V
mJ R
G
= 5
Ω
, L = 400μH, T
J
= 150°C
Energy losses include tail
t
d(off )
Turn-Off delay time — 689 — I
C
= 33A, V
CC
= 600V, V
GE
= 15V
t
f
Fall time — 2462 — R
G
= 5
Ω
, L = 400μH, T
J
= 150°C
C
ies
Input Capacitance — 3804 — V
GE
= 0V
C
oes
Output Capacitance — 161 — V
CC
= 30V
C
res
Reverse Transfer Capacitance — 31 — f = 1.0Mhz
T
J
= 150°C, I
C
= 99A
RBSOA Reverse Bias Safe Operating Area FULL SQUARE V
CC
Rg = 5
Ω
, V
GE
= +20V to 0V
μA
V
pF
V
CE(on)
Collector-to-Emitter Saturation Voltage
ns
15
—
Conditions
ns
29
—
E
of f
Turn-Off Switching Loss
16
—
E
of f
Turn-Off Switching Loss
3 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
 Highest passing voltage.
Qualification Information
†
Moisture Sensitivity Level TO-247AC N/A
Charged Device Model Class C4
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
††
This part number(s) passed Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by extension of the higher Automotive
level.
RoHS Compliant Yes
ESD
Machine Model Class M3
AEC-Q101-002
Human Body Model Class H2
AEC-Q101-001
P1-P3P4-P6P7-P9P10-P11

AUIRG4PH50S

Mfr. #:
Buy AUIRG4PH50S
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
Lifecycle:
New from this manufacturer.
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