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AUIRG4PH50S

P1-P3P4-P6P7-P9P10-P11
4 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 5- Reverse Bias SOA
T
J
= 150°C; V
GE
= 20V
Fig. 6 - Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20μs
Fig. 4 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
25 50 75 100 125 150
T
J
, Temperature (°C)
3.0
3.5
4.0
4.5
5.0
V
G
E
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
N
o
r
m
a
l
i
z
e
d
)
I
C
= 1mA
Fig. 3 - Forward SOA
T
C
= 25°C, T
J
≤ 150°C; V
GE
=15V
25 50 75 100 125 150
T
C
(°C)
0
20
40
60
80
100
120
140
160
I
C
(
A
)
25 50 75 100 125 150
T
C
(°C)
0
100
200
300
400
500
600
P
t
o
t
(
W
)
1 10 100 1000 10000
V
CE
(V)
0.01
0.1
1
10
100
1000
I
C
(
A
)
10μsec
100μsec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1msec
10 100 1000 10000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
0 2 4 6 8 10
V
CE
(V)
0
20
40
60
80
100
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
5 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= -40°C
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 12- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20μs
Fig. 8 - Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 20μs
Fig. 7 - Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20μs
5 101520
V
GE
(V)
0
1
2
3
4
5
6
7
8
V
C
E
(
V
)
I
CE
= 17A
I
CE
= 33A
I
CE
= 66A
5 101520
V
GE
(V)
0
1
2
3
4
5
6
7
8
V
C
E
(
V
)
I
CE
= 17A
I
CE
= 33A
I
CE
= 66A
5 101520
V
GE
(V)
0
1
2
3
4
5
6
7
8
V
C
E
(
V
)
I
CE
= 17A
I
CE
= 33A
I
CE
= 66A
0 2 4 6 8 10
V
CE
(V)
0
20
40
60
80
100
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
0 2 4 6 8 10
V
CE
(V)
0
20
40
60
80
100
I
C
E
(
A
)
V
GE
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
4567891011
V
GE
(V)
0
20
40
60
80
100
I
C
E
(
A
)
T
J
= 25°C
T
J
= 150°C
6 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 2, 2015
AUIRG4PH50S
Fig. 18 - Typical Gate Charge
vs. V
GE
I
CE
= 33A; L = 2.0mH
Fig. 13 - Typ. Energy Loss vs. I
C
T
J
= 150°C; L = 400μH; V
CE
= 600V, R
G
= 5Ω; V
GE
= 15V
Fig. 14 - Typ. Switching Time vs. I
C
T
J
= 150°C; L = 400μH; V
CE
= 600V, R
G
= 5Ω; V
GE
= 15V
Fig. 15 - Typ. Energy Loss vs. R
G
T
J
= 150°C; L = 400μH; V
CE
= 600V, I
CE
= 33A; V
GE
= 15V
Fig. 16- Typ. Switching Time vs. R
G
T
J
= 150°C; L = 400μH; V
CE
= 600V, I
CE
= 33A; V
GE
= 15V
Fig. 17 - Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
0 10203040506070
I
C
(A)
10
15
20
25
30
35
40
45
50
E
n
e
r
g
y
(
m
J
)
E
OFF
0 20 40 60 80
I
C
(A)
100
1000
10000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
td
OFF
t
F
0 20406080100
Rg (Ω)
24
26
28
30
32
E
n
e
r
g
y
(
m
J
)
E
OFF
0 20 40 60 80 100
R
G
(Ω)
100
1000
10000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
td
OFF
t
F
0 100 200 300 400 500 600
V
CE
(V)
1
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 20 40 60 80 100 120 140 160
Q
G
, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
,
G
a
t
e
-
t
o
-
E
m
i
t
t
e
r
V
o
l
t
a
g
e
(
V
)
V
CES
= 600V
V
CES
= 400V
P1-P3P4-P6P7-P9P10-P11

AUIRG4PH50S

Mfr. #:
Buy AUIRG4PH50S
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
Lifecycle:
New from this manufacturer.
Delivery:
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