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IDH10S60CAKSA1

P1-P3P4-P6P7-P7
IDH10S60C
2
nd
Generation thinQ!
TM
SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Breakdown voltage tested at 5mA
2)
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous forward current
I
F
T
C
<140 °C
10 A
RMS forward current
I
F,RMS
f=50 Hz
15
Surge non-repetitive forward current,
sine halfwave
I
F,SM
T
C
=25 °C, t
p
=10 ms
84
Repetitive peak forward current
I
F,RM
T
j
=150 °C,
T
C
=100 °C, D=0.1
39
Non-repetitive peak forward current
I
F,max
T
C
=25 °C, t
p
=10 µs
350
i²t value
∫i
2
dt
T
C
=25 °C, t
p
=10 ms
35
A
2
s
Repetitive peak reverse voltage
V
RRM
600 V
Diode dv/dt ruggedness
dv/ dt
V
R
= 0….480V
50 V/ns
Power dissipation
P
tot
T
C
=25 °C
100 W
Operating and storage temperature
T
j
, T
stg
-55 ... 175 °C
Mounting torque M3 and M3.5 screws 60 Mcm
Soldering temperature,
wavesoldering only allowed at leads
T
sold
1.6mm (0.063 in.)
from case for 10s
260 °C
Value
V
DC
600 V
Q
c
24 nC
I
F
10 A
Product Summary
Type Package Marking Pin 1 Pin 2
IDH10S60C PG-TO220-2 D10S60C C A
Rev. 2.0 page 1 2009-06-02
IDH10S60C
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
- - 1.5 K/W
Thermal resistance,
junction - ambient
R
thJA
leaded - - 62
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
V
DC
I
R
=0.14 mA
600 - - V
Diode forward voltage
V
F
I
F
=10 A, T
j
=25 °C
- 1.5 1.7
I
F
=10 A, T
j
=150 °C
- 1.7 2.1
Reverse current
I
R
V
R
=600 V, T
j
=25 °C
- 1.4 140 µA
V
R
=600 V, T
j
=150 °C
- 5 1400
AC characteristics
Total capacitive charge
Q
c
-24-nC
Switching time
3)
t
c
- - <10 ns
Total capacitance
C
V
R
=1 V, f=1 MHz
- 480 - pF
V
R
=300 V, f=1 MHz
-60-
V
R
=600 V, f=1 MHz
-60-
4)
Only capacative charge occuring, guaranteed by design.
Values
V
R
=400 V, I
F
≤I
F,max
,
di
F
/dt=200 A/µs,
T
j
=150 °C
3)
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
, which is dependent on T
j
, I
LOAD
, di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection.
1)
J-STD20 and JESD22
2)
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
Rev. 2.0 page 2 2009-06-02
IDH10S60C
1 Power dissipation 2 Diode forward current
P
tot
=f(T
C
) I
F
=f(T
C
); T
j
≤175 °C
parameter: R
thJC(max)
parameter: R
thJC(max)
; V
F(max)
3 Typ. forward characteristic 4 Typ. forward characteristic in surge current
I
F
=f(V
F
); t
p
=400 µs
mode
parameter: T
j
I
F
=f(V
F
); t
p
=400 µs; parameter: T
j
0
20
40
60
80
100
25 50 75 100 125 150 175 200
P
tot
[W]
T
C
[°C]
-55 °C
25 °C
100 °C
150 °C
175°C
0
10
20
30
01234
I
F
[A]
V
F
[V]
0
5
10
15
20
25
30
25 50 75 100 125 150 175 200
I
F
[A]
T
C
[°C]
-55 °C
25 °C
100 °C
150 °C
175°C
0
20
40
60
80
100
120
02468
I
F
[A]
V
F
[V]
Rev. 2.0 page 3 2009-06-02
P1-P3P4-P6P7-P7

IDH10S60CAKSA1

Mfr. #:
Buy IDH10S60CAKSA1
Manufacturer:
Infineon Technologies
Description:
Schottky Diodes & Rectifiers SIC DIODES
Lifecycle:
New from this manufacturer.
Delivery:
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