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IDH10S60CAKSA1

P1-P3P4-P6P7-P7
IDH10S60C
5 Typ. forward power dissipation vs. 6 Typ. reverse current vs. reverse voltage
average forward current
I
R
=f(V
R
)
P
F,AV
=f(I
F
), T
C
=100 °C, parameter: D =t
p
/T parameter: T
j
7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage
Z
thJC
=f(t
p
) C =f(V
R
); T
C
=25 °C, f=1 MHz
parameter: D =t
p
/T
10
-1
10
0
10
1
10
2
10
3
0
100
200
300
400
500
600
C [pF]
V
R
[V]
0.01
0.02
0.1
0.2
0.5
single pulse
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-2
10
-1
10
0
10
1
Z
thJC
[K/W]
t
P
[s]
-55 °C
25 °C
100 °C
150 °C
175 °C
10
-3
10
-2
10
-1
10
0
10
1
10
2
100 200 300 400 500 600
I
R
[µA]
V
R
[V]
0.1
0.2
0.5
1
0
10
20
30
40
50
0 5 10 15 20 25
P
F(AV)
[W]
I
F(AV)
[A]
Rev. 2.0 page 4 2009-06-02
IDH10S60C
9 Typ. C stored energy 10 Typ. Capacitive charge vs. current slope
E
C
=f(V
R
)
Q
C
=f(di
F
/dt)
4)
; T
j
=150 °C; I
F
≤I
F,max
0
5
10
15
20
25
100 400 700 1000
Q
c
[nC]
di
F
/dt [A/µs]
0
2
4
6
8
10
12
14
0 200 400 600
E
c
[µC]
V
R
[V]
Rev. 2.0 page 5 2009-06-02
IDH10S60C
PG-TO220-2: Outline
Dimensions in mm/inches
Rev. 2.0 page 6 2009-06-02
P1-P3P4-P6P7-P7

IDH10S60CAKSA1

Mfr. #:
Buy IDH10S60CAKSA1
Manufacturer:
Infineon Technologies
Description:
Schottky Diodes & Rectifiers SIC DIODES
Lifecycle:
New from this manufacturer.
Delivery:
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