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MCT5210300

P1-P3P4-P6P7-P9P10-P11
6/10/03
Page 1 of 11
© 2003 Fairchild Semiconductor Corporation
MCT5200 MCT5201 MCT5210 MCT5211
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
Description
The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting
diode, coupled with an NPN phototransistor in a six pin dual-in-line package.
The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering
250% CTR
CE(SAT)
with 1 mA of LED input current. When an LED input
current of 1.6 mA is supplied data rates to 20K bits/s are possible.
The MCT52XX can easily interface LSTTL to LSTTL/TTL, and with use of an
external base to emitter resistor data rates of 100K bits/s can be achieved.
Features
• High CTR
CE(SAT)
comparable to Darlingtons
• CTR guaranteed 0°C to 70°C
• High common mode transient rejection 5kV/µs
• Data rates up to 150 kbits/s (NRZ)
• Underwriters Laboratory (UL) recognized (file #E90700)
• VDE recognized (file #94766)
– Add option 300 (e.g., MCT5211.300)
Applications
• CMOS to CMOS/LSTTL logic isolation
• LSTTL to CMOS/LSTTL logic isolation
• RS-232 line receiver
• Telephone ring detector
• AC line voltage sensing
• Switching power supply
Parameters Symbol Device Value Units
TOTAL DEVICE
Storage Temperature T
STG
All -55 to +150 °C
Operating Temperature T
OPR
All -55 to +100 °C
Lead Solder Temperature T
SOL
All 260 for 10 sec °C
Total Device Power Dissipation @ 25°C (LED plus detector)
P
D
All
260 mW
Derate Linearly From 25°C 3.5 mW/°C
EMITTER
Continuous Forward Current I
F
All 50 mA
Reverse Input Voltage V
R
All 6 V
Forward Current - Peak (1 µs pulse, 300 pps) I
F
(pk) All 3.0 A
LED Power Dissipation
P
D
All 75 mW
Derate Linearly From 25°C All 1.0 mW/°C
DETECTOR
Continuous Collector Current I
C
All 150 mA
Detector Power Dissipation
P
D
All 150 mW
Derate Linearly from 25°C All 2.0 mW/°C
SCHEMATIC
6
1
6
1
6
1
1
2
6
5
COL
4 EMITTER
BASE
ANODE
CATHODE
3
6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
Page 2 of 11
© 2003 Fairchild Semiconductor Corporation
MCT5200 MCT5201 MCT5210 MCT5211
**All typical T
A
=25°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters Test Conditions Symbol Device Min Typ** Max Units
EMITTER
Input Forward Voltage (I
F
= 5 mA) V
F
All 1.25 1.5 V
Forward Voltage Temp.
Coefficient
(I
F
= 2 mA)
∆
V
F
∆
T
A
All -1.75
mV/
°C
Reverse Voltage (I
R
= 10 µA) V
R
All 6 V
Junction Capacitance (V
F
= 0 V, f = 1.0 MHz) C
J
All 18 pF
DETECTOR
Collector-Emitter Breakdown Voltage (I
C
= 1.0 mA, I
F
= 0) BV
CEO
All 30 100 V
Collector-Base Breakdown Voltage (I
C
= 10 µA, I
F
= 0) BV
CBO
All 30 120 V
Emitter-Base Breakdown Voltage (I
C
= 10 µA, I
F
= 0) BV
EBO
All 5 10 V
Collector-Emitter Dark Current (V
CE
= 10V, I
F
= 0, R
BE
= 1M
Ω
)I
CER
All 1 100 nA
Capacitance Collector to Emitter (V
CE
= 0, f = 1 MHz) C
CE
All 10 pF
Collector to Base (V
CB
= 0, f = 1 MHz) C
CB
All 80 pF
Emitter to Base (V
EB
= 0, f = 1 MHz) C
EB
All 15 pF
ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Device Min Typ** Max Units
Input-Output Isolation
Voltage
(10)
(f = 60Hz, t = 1 min.) V
ISO
All 5300 Vac(rms)
Isolation Resistance
(10)
V
I-O
= 500 VDC, T
A
= 25°CR
ISO
All 10
11
Ω
Isolation Capacitance
(9)
V
I-O
= 0, f = 1 MHz C
ISO
All 0.7 pF
Common Mode Transient V
CM
= 50 V
P-P1
, R
L
= 750
Ω
, I
F
= 0
CM
H
MCT5210/11
5000 V/µs
Rejection – Output High V
CM
= 50 V
P-P
, R
L
= 1K
Ω
, I
F
= 0 MCT5200/01
Common Mode Transient V
CM
= 50 V
P-P1
, R
L
= 750
Ω
, I
F
=1.6mA
CM
L
MCT5210/11
5000 V/µs
Rejection – Output Low V
CM
= 50 V
P-P1
, R
L
= 1K
Ω
, I
F
= 5 mA MCT5200/01
6/10/03
Page 3 of 11
© 2003 Fairchild Semiconductor Corporation
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
MCT5200 MCT5201 MCT5210 MCT5211
TRANSFER CHARACTERISTICS
(T
A
= 0°C to 70°C Unless otherwise specified.)
DC Characteristics Test Conditions Symbol Device Min Typ** Max Units
Saturated Current
Transfer Ratio
(1)
(Collector to Emitter)
I
F
= 10 mA, V
CE
= 0.4 V
CTR
CE(SAT)
MCT5200 75
%
I
F
= 5 mA, V
CE
= 0.4 V MCT5201 120
I
F
= 3.0 mA, V
CE
= 0.4 V MCT5210 60
I
F
= 1.6 mA, V
CE
= 0.4 V
MCT5211
100
I
F
= 1.0 mA, V
CE
= 0.4 V 75
Current Transfer Ratio
(Collector to Emitter)
(1)
I
F
= 3.0 mA, V
CE
= 5.0 V
CTR
(CE)
MCT5210 70
%I
F
= 1.6 mA, V
CE
= 5.0 V
MCT5211
150
I
F
= 1.0 mA, V
CE
= 5.0 V 110
Current Transfer Ratio
Collector to Base(2)
I
F
= 10 mA, V
CB
= 4.3 V
CTR
(CB)
MCT5200 0.2
%
I
F
= 5 mA, V
CB
= 4.3 V MCT5201 0.28
I
F
= 3.0 mA, V
CE
= 4.3 V MCT5210 0.2
I
F
= 1.6 mA, V
CE
= 4.3 V
MCT5211
0.3
I
F
= 1.0 mA, V
CE
= 4.3 V 0.25
Saturation Voltage
I
F
= 10 mA, I
CE
= 7.5 mA
V
CE(SAT)
MCT5200 0.4
V
I
F
= 5 mA, I
CE
= 6 mA MCT5201 0.4
I
F
= 3.0 mA, I
CE
= 1.8 mA MCT5210 0.4
I
F
= 1.6 mA, I
CE
= 1.6 mA MCT5211 0.4
AC Characteristics Test Conditions Symbol Device Min Typ Max Units
Propagation Delay
High to Low
(3)
R
L
= 330 Ω, R
BE
= ∞ I
F
= 3.0 mA
T
PHL
MCT5210
10
µs
R
L
= 3.3 kΩ, R
BE
= 39 kΩ V
CC
= 5.0 V 7
R
L
= 750 Ω, R
BE
= ∞ I
F
= 1.6mA
MCT5211
14
R
L
= 4.7 kΩ, R
BE
= 91 kΩ V
CC
= 5.0V 15
R
L
= 1.5 kΩ, R
BE
= ∞ I
F
= 1.0mA 17
R
L
= 10 kΩ, R
BE
= 160 kΩ V
CC
= 5.0V 24
V
CE
= 0.4V, V
CC
= 5V,
R
L
= fig. 13, R
BE
= 330 kΩ
I
F
= 10mA MCT5200 1.6 12
I
F
= 5mA MCT5201 3 30
Propagation Delay
Low to High
(4)
R
L
= 330 Ω, R
BE
= ∞ I
F
= 3.0 mA
T
PLH
MCT5210
0.4
µs
R
L
= 3.3 kΩ, R
BE
= 39 kΩ V
CC
= 5.0 V 8
R
L
= 750 Ω, R
BE
= ∞ I
F
= 1.6mA
MCT5211
2.5
R
L
= 4.7 kΩ, R
BE
= 91 kΩ V
CC
= 5.0V 11
R
L
= 1.5 kΩ, R
BE
= ∞ I
F
= 1.0mA 7
R
L
= 10 kΩ, R
BE
= 160 kΩ V
CC
= 5.0 V 16
V
CE
= 0.4V, V
CC
= 5V,
R
L
= fig. 13, R
BE
= 330 kΩ
I
F
= 10mA MCT5200 18 20
I
F
= 5mA MCT5201 12 13
Delay Time
(5)
V
CE
= 0.4V,
R
BE
= 330 kΩ,
R
L
= 1 kΩ, V
CC
= 5V
I
F
= 10mA
t
d
MCT5200 0.5 7
µs
I
F
= 5mA MCT5201 1.1 15
Rise Time
(6)
V
CE
= 0.4V,
R
BE
= 330 kΩ,
R
L
= 1 kΩ, V
CC
= 5V
I
F
= 10mA
t
r
MCT5200 1.3 6
µs
I
F
= 5mA MCT5201 2.5 20
P1-P3P4-P6P7-P9P10-P11

MCT5210300

Mfr. #:
Buy MCT5210300
Manufacturer:
ON Semiconductor / Fairchild
Description:
Transistor Output Optocouplers 6-Pin Optocoupler Phototrans LoCurrent
Lifecycle:
New from this manufacturer.
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