6/10/03
LOW INPUT CURRENT
PHOTOTRANSISTOR OPTOCOUPLERS
Page 4 of 11
© 2003 Fairchild Semiconductor Corporation
MCT5200 MCT5201 MCT5210 MCT5211
**All typicals at T
A
= 25°C
Notes
1. DC Current Transfer Ratio (CTR
CE
) is defined as the transistor collector current (I
CE
) divided by the input LED current (I
F
) x
100%, at a specified voltage between the collector and emitter (V
CE
).
2. The collector base Current Transfer Ratio (CTR
CB
) is defined as the transistor collector base photocurrent(I
CB
) divided by the
input LED current (I
F
) time 100%.
3. Referring to Figure 14 the T
PHL
propagation delay is measured from the 50% point of the rising edge of the data input pulse to
the 1.3V point on the falling edge of the output pulse.
4. Referring to Figure 14 the T
PLH
propagation delay is measured from the 50% point of the falling edge of data input pulse to the
1.3V point on the rising edge of the output pulse.
5. Delay time (t
d
) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.
6. Rise time (t
r
) is measured from 90% to 10% of Vo falling edge.
7. Storage time (t
s
) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.
8. Fall time (t
f
) is measured from 10% to 90% of Vo rising edge.
9. C
ISO
is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).
10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted together.
Storage Time
(7)
V
CE
= 0.4V,
R
BE
= 330 kΩ,
R
L
= 1 kΩ, V
CC
= 5V
I
F
= 10mA
t
s
MCT5200 15 18
µs
I
F
= 5mA MCT5201 10 13
Fall Time
(8)
V
CE
= 0.4V,
R
BE
= 330 kΩ,
R
L
= 1 kΩ, V
CC
= 5V
I
F
= 10mA
t
f
MCT5200 16 30
µs
I
F
= 5mA MCT5201 16 30
TRANSFER CHARACTERISTICS (T
A
= 0°C to 70°C Unless otherwise specified.) (Continued)
DC Characteristics Test Conditions Symbol Device Min Typ** Max Units
