IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Pins: 1 - Gate 2 - Collector
3 - Emitter 4 - Collector
Bottom Side
TO-220 AB Dimensions
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
g
fs
I
C
= I
C90
; V
CE
= 10 V, 12 16 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
1750 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 90 pF
C
res
31 pF
I
C(ON)
V
GE
= 10V, V
CE
= 10V 90 A
Q
g
63 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13 nC
Q
gc
26 nC
t
d(on)
28 ns
t
ri
20 ns
t
d(off)
400 800 ns
t
fi
380 700 ns
E
off
6.5 10.5 mJ
t
d(on)
30 ns
t
ri
27 ns
E
on
0.90 mJ
t
d(off)
700 ns
t
fi
550 ns
E
off
9.5 mJ
R
thJC
0.83 K/W
R
thCK
TO-220 0.5 K/W
Inductive load, T
J
= 25
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 800 V, R
G
= R
off
= 47 Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 800 V, R
G
= R
off
= 47 Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXGA 20N120
IXGP 20N120
Min. Recommended Footprint
(Dimensions in inches and mm)
