AOD607
Symbol Min Typ Max Units
BV
DSS
30 V
1
T
J
=55°C 5
I
GSS
100 nA
V
GS(th)
1.5 1.7 2.5 V
I
D(ON)
40 A
20 25
T
J
=125°C 28 34
27.5 34 mΩ
g
FS
25 S
V
SD
0.75 1 V
I
S
18 A
I
SM
40 A
C
iss
1040 1250 pF
C
oss
180 pF
C
rss
110 pF
R
g
0.7 1.5 Ω
Q
g
(10V) 19.8 25 nC
Q
g
(4.5V) 9.8 12.5 nC
Q
gs
2.5 nC
Q
gd
3.5 nC
t
D(on)
4.5 ns
t
r
3.9 ns
t
D(off)
17.4 ns
t
f
3.2 ns
t
rr
19 25
ns
Q
rr
8 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=10V, V
DS
=15V, I
D
=12A
Total Gate Charge
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=15V, R
L
=1.25Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Turn-On DelayTime
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=12A
Total Gate Charge
Gate Source Charge
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
µA
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250µA
V
DS
=24V, V
GS
=0V
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
N-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
GS
=4.5V, I
D
=5A
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=4.5V, V
DS
=5V
Pulsed Body-Diode Current
C
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=12A, dI/dt=100A/µs
V
GS
=10V, I
D
=12A
Reverse Transfer Capacitance
I
F
=12A, dI/dt=100A/µs
mΩ
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1
ST
2008).
Rev3:
Oct 2008
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
