AOD607
Symbol Min Typ Max Units
BV
DSS
-30 V
-0.003 -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
-1.5 -2 -2.4 V
I
D(ON)
-40 A
30 37
T
J
=125°C 42 50
50 62 mΩ
g
FS
17 S
V
SD
-0.76 -1 V
I
S
-18 A
I
SM
-40 A
C
iss
920 1100 pF
C
oss
190 pF
C
rss
122 pF
R
g
3.6 5 Ω
Q
g
(10V) 18.7 23 nC
Q
g
(4.5V) 9.7 11.7 nC
Q
gs
2.54 nC
Q
gd
5.4 nC
t
D(on)
9 13 ns
t
r
25 35 ns
t
D(off)
20 30 ns
t
f
12 18 ns
t
rr
21.4
26 ns
Q
rr
13 16 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-12A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-12A
Reverse Transfer Capacitance
I
F
=-12A, dI/dt=100A/µs
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250µA
V
DS
=-24V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
V
GS
=-4.5V, I
D
=-5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-12A
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-10V, V
DS
=-15V, R
L
=1.25Ω,
R
GEN
=3Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
SWITCHING PARAMETERS
Total Gate Charge (4.5V)
Gate Source Charge
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=0V, V
DS
=-15V, f=1MHz
Gate Drain Charge
Total Gate Charge (10V)
V
GS
=-10V, V
DS
=-15V, I
D
=-12A
Pulsed Body-Diode Current
C
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on steady-state R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature fo 175°C may be u sed if the PCB or heatsink allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.
*This device is guaranteed green after data code 8X11 (Sep 1
ST
2008).
Rev
3: Oct. 2008
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
