OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

IXYH30N120C3

P1-P3P4-P6
© 2013 IXYS CORPORATION, All Rights Reserved
IXYP30N120C3
IXYH30N120C3
V
CES
= 1200V
I
C110
= 30A
V
CE(sat)



3.3V
t
fi(typ)
= 88ns
DS100385D(9/13)
High-Speed IGBT
for 20-50 kHz Switching
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
BV
CES
I
C
= 250A, V
GE
= 0V 1200 V
V
GE(th)
I
C
= 250A, V
CE
= V
GE
3.0 5.0 V
I
CES
V
CE
= V
CES
,
V
GE
= 0V 25 A
T
J
= 150C 750 μA
I
GES
V
CE
= 0V, V
GE
= 20V 100 nA
V
CE(sat)
I
C
= 30A, V
GE
= 15V, Note 1 3.3 V
T
J
= 150C 3.7 V
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 175°C 1200 V
V
CGR
T
J
= 25°C to 175°C, R
GE
= 1M 1200 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C 75 A
I
C110
T
C
= 110°C 30 A
I
CM
T
C
= 25°C, 1ms 145 A
I
A
T
C
= 25°C 20 A
E
AS
T
C
= 25°C 400 mJ
SSOA V
GE
= 15V, T
VJ
= 150°C, R
G
= 10 I
CM
= 60 A
(RBSOA) Clamped Inductive Load V
CE
V
CES
P
C
T
C
= 25°C 500 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-55 ... +175 °C
T
L
Maximum Lead Temperature for Soldering 300 °C
T
SOLD
1.6 mm (0.062in.) from Case for 10s 260 °C
M
d
Mounting Torque 1.13/10 Nm/lb.in
Weight TO-220 3 g
TO-247 6 g
1200V XPT
TM
GenX3
TM
IGBTs
Features
High Voltage Package
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
International Standard Packages
Advantages
High Power Density
Low Gate Drive Requirement
Applications
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
G = Gate C = Collector
E = Emitter Tab = Collector
TO-220 (IXYP)
Tab
G
C
E
TO-247 AD (IXYH)
G
C
E
Tab
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYP30N120C3
IXYH30N120C3
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(T
J
= 25°C Unless Otherwise Specified) Min. Typ. Max.
g
fs
I
C
= 30A, V
CE
= 10V, Note 1 10 17 S
C
ie
s
1640 pF
C
oes
V
CE
= 25V, V
GE
= 0V, f = 1MHz 110 pF
C
res
38 pF
Q
g(on)
69 nC
Q
ge
I
C
= 30A, V
GE
= 15V, V
CE
= 0.5 • V
CES
9 nC
Q
gc
34 nC
t
d(on)
19 ns
t
ri
40 ns
E
on
2.6 mJ
t
d(off)
130 ns
t
fi
88 ns
E
of
f
1.1 mJ
t
d(on)
19 ns
t
ri
52 ns
E
on
6.0 mJ
t
d(off)
156 ns
t
fi
140 ns
E
off
1.6 mJ
R
thJC
0.30 °C/W
R
thCS
TO-220 0.50 °C/W
R
thCS
TO-247 0.21 °C/W
Inductive load, T
J
= 25°C
I
C
= 30A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 10
Note 2
Inductive load, T
J
= 150°C
I
C
= 30A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 10
Note 2
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher V
CE
(clamp), T
J
or R
G
.
e
P
TO-247 Outline
1 2 3
Terminals: 1 - Gate 2 - Collector
3 - Emitter
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Pins: 1 - Gate 2 - Collector
3 - Emitter
TO-220 Outline
© 2013 IXYS CORPORATION, All Rights Reserved
IXYP30N120C3
IXYH30N120C3
Fig. 1. Output Characteristics @ T
J
= 25ºC
0
10
20
30
40
50
60
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
12V
11V
10V
7V
8V
6V
9V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
0 5 10 15 20 25 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
10V
14V
11V
12V
7V
6V
9V
13V
8V
Fig. 3. Output Characteristics @ T
J
= 150ºC
0
10
20
30
40
50
60
01234567
V
CE
- Volts
I
C
- Amperes
8V
7V
6V
5V
9V
V
GE
= 15V
13V
12V
11V
10V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 30A
I
C
= 15A
I
C
= 60A
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
1
2
3
4
5
6
7
8
7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 60A
T
J
= 25ºC
30A
15A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
4567891011
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40ºC
25ºC
150ºC
P1-P3P4-P6

IXYH30N120C3

Mfr. #:
Buy IXYH30N120C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1200V XPT GenX3 IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet