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IXYH30N120C3

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYP30N120C3
IXYH30N120C3
Fig. 11. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 7. Transconductance
0
5
10
15
20
25
0 102030405060708090100
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 10. Reverse-Bias Safe Operating Area
0
10
20
30
40
50
60
70
200 300 400 500 600 700 800 900 1000 1100 1200 1300
V
CE
- Volts
I
C
- Amperes
T
J
= 150ºC
R
G
= 10
dv / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 10203040506070
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 30A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
© 2013 IXYS CORPORATION, All Rights Reserved
IXYP30N120C3
IXYH30N120C3
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
0
3
6
9
12
15
18
21
24
27
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 150ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 30A
I
C
= 60A
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
20
40
60
80
100
120
140
160
180
200
220
15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f i
- Nanoseconds
50
100
150
200
250
300
350
400
450
500
550
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 60A
I
C
= 30A
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
0.5
1.0
1.5
2.0
2.5
3.0
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
25 50 75 100 125 150
T
J
- Degrees Centigrade
E
off
- MilliJoules
0
4
8
12
16
20
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 10
,
V
GE
= 15V
V
CE
= 600V
I
C
= 30A
I
C
= 60A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
20
40
60
80
100
120
140
160
180
200
220
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f i
- Nanoseconds
60
80
100
120
140
160
180
200
220
240
260
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
T
J
= 150ºC
T
J
= 25ºC
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
20
40
60
80
100
120
140
160
180
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
100
110
120
130
140
150
160
170
180
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
I
C
= 60A
I
C
= 30A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYP30N120C3
IXYH30N120C3
IXYS REF: IXY_30N120C3(4N-C91) 9-04-13
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
0
20
40
60
80
100
120
140
160
180
200
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
r i
- Nanosecond
s
10
12
14
16
18
20
22
24
26
28
30
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 150ºC
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
0
40
80
120
160
200
240
25 50 75 100 125 150
T
J
- Degrees Centigrade
t
r i
- Nanosecond
s
16
18
20
22
24
26
28
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 10
, V
GE
= 15V
V
CE
= 600V
I
C
= 60A
I
C
= 30A
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
280
320
10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r i
- Nanosecond
s
0
10
20
30
40
50
60
70
80
t
d(on)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 30A
I
C
= 60A
Fig. 21. Maximum Peak Load Current vs. Frequency
0
10
20
30
40
50
60
70
80
90
100
1.0 10.0 100.0 1,000.0
f
max
- KiloHertzs
I
C
- Amperes
T
J
= 150ºC
T
C
= 75ºC
V
CE
= 600V
V
GE
= 15V
R
G
= 10
D = 0.5
Square Wave
Triangular Wave
P1-P3P4-P6

IXYH30N120C3

Mfr. #:
Buy IXYH30N120C3
Manufacturer:
Littelfuse
Description:
IGBT Transistors 1200V XPT GenX3 IGBT
Lifecycle:
New from this manufacturer.
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