NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
PSMN1R0-30YLC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 15 January 2015 3 / 14
Symbol Parameter Conditions Min Max Unit
V
GS
gate-source voltage -20 20 V
P
tot
total power dissipation T
mb
= 25 °C; Fig. 1 - 272 W
V
GS
= 10 V; T
mb
= 25 °C; Fig. 2 [1] - 100 AI
D
drain current
V
GS
= 10 V; T
mb
= 100 °C; Fig. 2 [1] - 100 A
I
DM
peak drain current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C; Fig. 3 - 1450 A
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
T
sld(M)
peak soldering temperature - 260 °C
V
ESD
electrostatic discharge voltage MM (JEDEC JESD22-A115) 960 - V
Source-drain diode
I
S
source current T
mb
= 25 °C [1] - 100 A
I
SM
peak source current pulsed; t
p
≤ 10 µs; T
mb
= 25 °C - 1450 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 100 A;
V
sup
≤ 30 V; R
GS
= 50 Ω; unclamped;
Fig. 4
- 259 mJ
[1] Continuous current is limited by package.
T
mb
(°C)
0 20015050 100
03na19
40
80
120
P
der
(%)
0
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
003aae 940
0
80
160
240
320
400
0 50 100 150 200
T
mb
( C)
I
D
(A)
(1)
Fig. 2. Continuous drain current as a function of
mounting base temperature
