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PSMN1R0-30YLC,115

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
PSMN1R0-30YLC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 15 January 2015 6 / 14
Symbol Parameter Conditions Min Typ Max Unit
R
G
gate resistance f = 1 MHz - 1.1 2.2 Ω
Dynamic characteristics
I
D
= 25 A; V
DS
= 15 V; V
GS
= 10 V;
Fig. 14; Fig. 15
- 103.5 145 nC
I
D
= 25 A; V
DS
= 15 V; V
GS
= 4.5 V;
Fig. 15; Fig. 14
- 50 70 nC
Q
G(tot)
total gate charge
I
D
= 0 A; V
DS
= 0 V; V
GS
= 10 V; Fig. 15 - 96.5 - nC
Q
GS
gate-source charge - 12.9 - nC
Q
GS(th)
pre-threshold gate-
source charge
- 10.1 - nC
Q
GS(th-pl)
post-threshold gate-
source charge
- 2.8 - nC
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 15 V; V
GS
= 4.5 V;
Fig. 14; Fig. 15
- 14.6 26 nC
V
GS(pl)
gate-source plateau
voltage
I
D
= 25 A; V
DS
= 15 V; Fig. 14 - 2.2 - V
C
iss
input capacitance 3322 6645 9968 pF
C
oss
output capacitance 605 1210 1815 pF
C
rss
reverse transfer
capacitance
V
DS
= 15 V; V
GS
= 0 V; f = 1 MHz;
T
j
= 25 °C; Fig. 16
240 481 842 pF
t
d(on)
turn-on delay time - 44 - ns
t
r
rise time - 77 - ns
t
d(off)
turn-off delay time - 108 - ns
t
f
fall time
V
DS
= 15 V; R
L
= 0.6 Ω; V
GS
= 4.5 V;
R
G(ext)
= 4.7 Ω
- 60 - ns
Q
oss
output charge V
GS
= 0 V; V
DS
= 15 V; f = 1 MHz;
T
j
= 25 °C
- 35.2 - nC
Source-drain diode
V
SD
source-drain voltage I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C; Fig. 17 - 0.8 1.1 V
t
rr
reverse recovery time - 45 - ns
Q
r
recovered charge
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 15 V
- 67 - nC
t
a
reverse recovery rise
time
- 28.5 - ns
t
b
reverse recovery fall
time
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 15 V; Fig. 18
- 16.5 - ns
NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
PSMN1R0-30YLC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 15 January 2015 7 / 14
003a ae 943
0
25
50
75
100
0 0.5 1
V
DS
(V)
I
D
(A)
2.83.0
4.5
10.0
2.4
2.2
V
GS
(V) =
2.6
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
003a a e 944
0
2
4
6
8
0 4 8 12 16
V
GS
(V)
R
DS on
(m
W
)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003a ae 949
0
60
120
180
240
300
0 25 50 75 100
I
D
(A)
g
fs
(S)
Fig. 8. Forward transconductance as a function of
drain current; typical values
003a a e 951
0
25
50
75
100
0 1 2 3 4
V
GS
(V)
I
D
(A)
T
j
= 25 C
T
j
= 150 C
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
NXP Semiconductors
PSMN1R0-30YLC
N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using
NextPower technology
PSMN1R0-30YLC All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 15 January 2015 8 / 14
003a ae 948
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
0 1 2 3
V
GS
(V)
I
D
(A)
Min Typ Max
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
003a a e 947
0
1
2
3
-60 0 60 120 180
T
j
( C)
V
GS (th)
(V)
Min (5mA)
1mA
Max (1mA)
I
D
= 5mA
Fig. 11. Gate-source threshold voltage as a function of
junction temperature
003a a e 945
0
2
4
6
8
0 25 50 75 100
I
D
(A)
R
DS on
(mW)
10
2.8
3.0
V
GS
(V) =2.6
3.5
2.4
4.5
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
003a a e 946
0
0.5
1
1.5
2
-60 0 60 120 180
T
j
( C)
a
4.5V
V
GS
= 10V
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
P1-P3P4-P6P7-P9P10-P12P13-P15

PSMN1R0-30YLC,115

Mfr. #:
Buy PSMN1R0-30YLC,115
Manufacturer:
Nexperia
Description:
MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
Lifecycle:
New from this manufacturer.
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