Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
D
F
N
1
0
1
0
D
-
3
PBSS4160QA
60 V, 1 A NPN low VCEsat (BISS) transistor
23 August 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
PNP complement: PBSS5160QA.
2. Features and benefits
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain h
FE
at high I
C
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirements
Solderable side pads
AEC-Q101 qualified
3. Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter
voltage
open base - - 60 V
I
C
collector current - - 1 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - - 1.5 A
R
CEsat
collector-emitter
saturation resistance
I
C
= 1 A; I
B
= 0.1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
- 170 235
NXP Semiconductors
PBSS4160QA
60 V, 1 A NPN low VCEsat (BISS) transistor
PBSS4160QA All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 23 August 2013 2 / 17
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 B base
2 E emitter
3 C collector
4 C collector
DFN1010D-3 (SOT1215)
sym123
C
E
B
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS4160QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package; no
leads; 3 terminals
SOT1215
7. Marking
Table 4. Marking codes
Type number Marking code
PBSS4160QA 11 00 10
MARKING CODE
(EXAMPLE)
PIN 1
INDICATION MARK
VENDOR CODE
YEAR DATE
CODE
READING
DIRECTION
READING EXAMPLE:
11
01
10
aaa-008041
MARK-FREE AREA
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description

PBSS4160QAZ

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60 V, 1A NPN low VCE sat (BISS) transi
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet