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PBSS4160QAZ
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
NXP Semiconductors
PBSS4160QA
60 V
, 1 A NPN low VCEsat (BISS) transistor
PBSS4160QA
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
23 August 2013
6 / 17
aaa-007847
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
duty cycle = 1
FR4 PCB, single-sided copper
, 6 cm
2
Fig. 5.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007848
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, 4-layer copper
, standard footprint
Fig. 6.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBSS4160QA
60 V
, 1 A NPN low VCEsat (BISS) transistor
PBSS4160QA
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
23 August 2013
7 / 17
aaa-007849
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
duty cycle = 1
FR4 PCB, 4-layer copper
, 1 cm
2
Fig. 7.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
V
CB
= 48 V; I
E
= 0 A; T
amb
= 25 °C
-
-
100
nA
I
CBO
collector-base cut-off
current
V
CB
= 48 V; I
E
= 0 A; T
j
= 150 °C
-
-
50
µA
I
CES
collector-emitter cut-off
current
V
CE
= 48 V; V
BE
= 0 V; T
amb
= 25 °C
-
-
100
nA
I
EBO
emitter-base cut-off
current
V
EB
= 5 V; I
C
= 0 A; T
amb
= 25 °C
-
-
100
nA
V
CE
= 2 V; I
C
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
230
400
-
V
CE
= 2 V; I
C
= 500 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
150
240
-
h
FE
DC current gain
V
CE
= 2 V; I
C
= 1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
85
130
-
I
C
= 500 mA; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
90
125
mV
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
180
245
mV
V
CEsat
collector-emitter
saturation voltage
I
C
= 1 A; I
B
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
170
235
mV
R
CEsat
collector-emitter
saturation resistance
I
C
= 1 A; I
B
= 0.1 A; pulsed; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
-
170
235
mΩ
NXP Semiconductors
PBSS4160QA
60 V
, 1 A NPN low VCEsat (BISS) transistor
PBSS4160QA
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
23 August 2013
8 / 17
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
I
C
= 500 mA; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
0.89
1
V
I
C
= 1 A; I
B
= 50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
0.94
1.05
V
V
BEsat
base-emitter saturation
voltage
I
C
= 1 A; I
B
= 100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
0.98
1.1
V
V
BEon
base-emitter turn-on
voltage
V
CE
= 2 V; I
C
= 0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
0.78
0.9
V
t
d
delay time
-
15
-
ns
t
r
rise time
-
85
-
ns
t
on
turn-on time
-
100
-
ns
t
s
storage time
-
545
-
ns
t
f
fall time
-
125
-
ns
t
off
turn-off time
V
CC
= 10 V; I
C
= 0.5 A; I
Bon
= 25 mA;
I
Boff
= -25 mA; T
amb
= 25 °C
-
670
-
ns
f
T
transition frequency
V
CE
= 10 V; I
C
= 50 mA; f = 100 MHz;
T
amb
= 25 °C
120
180
-
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
4.7
6
pF
aaa-007850
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
10
2
10
3
h
FE
10
(1)
(2)
(3)
V
CE
= 2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 8.
DC current gain as a function of collector
current; typical values
V
CE
(V)
0
5
4
2
3
1
aaa-007851
0.5
1.0
1.5
I
C
(A)
0
I
B
= 13 mA
1
1.7
10.4
9.1
7.8
6.5
5.2
3.9
2.6
1.3
T
amb
= 25 °C
Fig. 9.
Collector current as a function of collector-
emitter voltage; typical values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
PBSS4160QAZ
Mfr. #:
Buy PBSS4160QAZ
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60 V, 1A NPN low VCE sat (BISS) transi
Lifecycle:
New from this manufacturer.
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