OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NTD85N02RT4

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 9
1 Publication Order Number:
NTD85N02R/D
NTD85N02R
Power MOSFET
24 Volts, 85 Amps
Single N−Channel,
DPAK/IPAK
Features
• Planar HD3e Process for Fast Switching Performance
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Low Gate Charge to Minimize Switching Losses
• Pb−Free Packages are Available
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
24 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
17
A
T
A
= 85°C 12
Power Dissipation
R
JA
(Note 1)
T
A
= 25°C P
D
2.4 W
Continuous Drain
Current R
JA
(Note 2)
T
A
= 25°C
I
D
12
A
T
A
= 85°C 8.8
Power Dissipation
R
JA
(Note 2)
T
A
= 25°C P
D
1.25 W
Continuous Drain
Current R
JC
(Note 1)
T
C
= 25°C
I
D
85
A
T
C
= 85°C 58
Power Dissipation
R
JC
(Note 1)
T
C
= 25°C P
D
78.1 W
Pulsed Drain
Current
T
A
= 25°C, t
p
= 10s
I
DM
192 A
Current Limited by Package T
A
= 25°C I
DmaxPkg
45 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
78 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy T
J
= 25°C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 13 A
pk
, L = 1.0 mH, R
G
= 25 
EAS 85 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
D
S
G
N−Channel
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
24 V 5.2 m V85 A
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENTS
DPAK
CASE 369AA
STYLE2
DPAK−3
CASE 369D
STYLE 2
1
2
3
4
1
2
3
4
Y = Year
WW = Work Week
85N02R = Specific Device Code
G = Pb−Free Package
YWW
85
N02G
4
1 Gate
2 Drain
3 Source
4 Drain
132
1
3
2
4
YWW
85
N02G
NTD85N02R
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
JC
1.6
°C/W
Junction−to−TAB (Drain)
R
JC−TAB
3.5
Junction−to−Ambient – Steady State (Note 1)
R
JA
52
Junction−to−Ambient – Steady State (Note 2)
R
JA
100
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
24 28 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
20.5
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25 °C 1.5
A
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A
1.0 1.5 2.0 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
4
mV/°C
Drain−to−Source on Resistance R
DS(ON)
V
GS
= 10 V I
D
= 20 A 4.8 5.2
m
V
GS
= 4.5 V I
D
= 20 A 6.5
Forward Transconductance g
FS
V
DS
= 10 V, I
D
= 15 A 38 S
CHARGES AND CAPACITANCES
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 20 V
2050
pF
Output Capacitance C
OSS
871
Reverse Transfer Capacitance C
RSS
359
Total Gate Charge Q
G(TOT)
V
GS
= 5.0 V, V
DS
= 10 V; I
D
= 10 A
17.7
nC
Threshold Gate Charge Q
G(TH)
1.6
Gate−to−Source Charge Q
GS
2.6
Gate−to−Drain Charge Q
GD
7.1
Total Gate Charge Q
G(TOT)
V
GS
= 10 V, V
DS
= 10 V;
I
D
= 10 A
35.1 nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
d(ON)
V
GS
= 10 V, V
DS
= 10 V,
I
D
= 30 A, R
G
= 3.0
6.3
ns
Rise Time t
r
77
Turn−Off Delay Time t
d(OFF)
25
Fall Time t
f
12
3. Pulse Test: pulse width v 300 s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD85N02R
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.81 1.0
V
T
J
= 125°C 0.65
Reverse Recovery Time t
RR
V
GS
= 0 V, dIS/dt = 100 A/s,
I
S
= 20 A
37.5
ns
Charge Time t
a
16.8
Discharge Time t
b
20.7
Reverse Recovery Charge Q
RR
27 nC
PACKAGE PARASITIC VALUES
Source Inductance L
S
T
A
= 25°C
2.49
nH
Drain Inductance, DPAK L
D
0.0164
Drain Inductance, IPAK* L
D
1.88
Gate Inductance L
G
3.46
Gate Resistance R
G
1.2
*Assume standoff of 110 mils.
ORDERING INFORMATION
Device Package Shipping
†
NTD85N02R DPAK
75 Units / Rail
NTD85N02RG DPAK
(Pb−Free)
NTD85N02R−001 IPAK
800 / Tape & Reel
NTD85N02R−1G IPAK
(Pb−Free)
NTD85N02RT4 DPAK
2500 / Tape & Reel
NTD85N02RT4G DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
P1-P3P4-P6P7-P8

NTD85N02RT4

Mfr. #:
Buy NTD85N02RT4
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 24V 12A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet