NTD85N02R
http://onsemi.com
4
3 V
10 V
0
0.018
40
0.014
0.006
0.002
16
1.6
1.2
1.4
1.0
0.8
0.6
10,000
100,000
010
40
42
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
0
0.018
40
0.010
0.006
0.002
80
Figure 3. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Temperature
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
−50 50250−25 75 125100
23
01510 2
5
6
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 10 V
V
GS
= 4.5 V
150
V
GS
= 0 V
I
D
= 40 A
V
GS
= 10 V
80
V
GS
= 4 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
T
J
= 150°C
T
J
= 125°C
40
0
160
80
45
T
J
= 25°C
T
J
= −55°C
20
100
6 V
3.2 V
5 V
1.8
6
1000
8
120
10
120
120 160
0.014
T
J
= 125°C
80
0.010
120
2.8 V
2.6 V
2.4 V
4.4 V
3.4 V
3.6 V
3.8 V
160
