2
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +65 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Operating Voltage V
DD
32, +0 Vdc
Storage Temperature Range T
stg
--65 to +150 C
Case Operating Temperature Range T
C
--40 to +125 C
Operating Junction Temperature Range
(1,2)
T
J
--40 to +225 C
CW Operation @ T
C
=25C
Derate above 25C
CW 124
0.70
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 32 W CW, 28 Vdc, I
DQ
= 800 mA, 2140 MHz
R
JC
0.59 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (T
A
=25C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
=65Vdc,V
GS
=0Vdc)
I
DSS
— — 10 Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
=28Vdc,V
GS
=0Vdc)
I
DSS
— — 5 Adc
Gate--Source Leakage Current
(V
GS
=5Vdc,V
DS
=0Vdc)
I
GSS
— — 1 Adc
On Characteristics
Gate Threshold Voltage
(V
DS
=10Vdc,I
D
= 146 Adc)
V
GS(th)
0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(V
DD
=28Vdc,I
D
= 800 mAdc, Measured in Functional Test)
V
GS(Q)
1.5 1.9 2.3 Vdc
Drain--Source On--Voltage
(V
GS
=10Vdc,I
D
=1.4Adc)
V
DS(on)
0.1 0.15 0.3 Vdc
Functional Tests
(4,5)
(In Freescale Test Fixture, 50 ohm system) V
DD
=28Vdc,I
DQ
= 800 mA, P
out
= 32 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain
G
ps
18.7 19.3 21.7 dB
Drain Efficiency
D
32.0 33.5 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.2 6.7 — dB
Adjacent Channel Power Ratio ACPR — --32.6 --30.5 dBc
Input Return Loss IRL — -- 2 4 -- 9 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal M easurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
. Select
Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
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