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AFT21S140W02SR3

P1-P3P4-P6P7-P9P10-P12P13-P15
AFT21S140W02SR3 AFT21S140W02GSR3
7
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Load Pull Performance — Maximum Power Tuning
V
DD
=28Vdc,I
DQ
= 770 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 4.72 - j7.83 5.44 + j8.03 3.92 - j6.59 18.9 51.8 152 54.3 -10
2140 6.03 - j8.06 6.63 + j8.08 3.84 - j6.22 19.0 51.9 156 55.5 -11
2170 7.23 - j7.37 7.86 + j7.65 3.89 - j6.16 19.2 52.0 158 56.6 -11
f
(MHz)
Z
source
()
Z
in
()
Max Output Power
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 4.72 - j7.83 5.92 + j8.68 3.92 - j7.04 16.8 52.8 190 57.5 -16
2140 6.03 - j8.06 7.42 + j8.66 3.99 - j6.82 16.9 52.8 193 58.4 -17
2170 7.23 - j7.37 8.93 + j7.96 3.96 - j6.86 16.9 52.9 193 58.1 -17
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 7. Load Pull Performance — Maximum Drain Efficiency Tuning
V
DD
=28Vdc,I
DQ
= 770 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P1dB
Z
load
(1)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 4.72 - j7.83 5.45 + j8.49 8.22 - j1.63 21.7 49.5 89 64.0 -18
2140 6.03 - j8.06 6.72 + j8.52 6.98 - j1.62 21.7 49.7 93 64.4 -18
2170 7.23 - j7.37 8.07 + j8.09 5.87 - j1.79 21.7 50.0 99 65.8 -19
f
(MHz)
Z
source
()
Z
in
()
Max Drain Efficiency
P3dB
Z
load
(2)
()
Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 4.72 - j7.83 5.83 + j8.94 6.85 - j4.39 18.9 51.6 143 66.0 -22
2140 6.03 - j8.06 7.35 + j8.95 6.31 - j4.25 18.8 51.7 148 66.5 -23
2170 7.23 - j7.37 9.04 + j8.28 6.47 - j2.38 19.6 50.9 122 67.0 -27
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Z
source
Z
in
Z
load
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT21S140W02SR3 AFT21S140W02GSR3
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
Figure 8. P1dB Load Pull Output Power Contours (dBm)
Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
7
8
6
10
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
7
8
6
10
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
7
8
6
10
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
7
8
6
10
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
REAL ()
IMAGINARY ()
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
51
50.5
50
51.5
49.5
60
58
56
54
52
50
48
19.5
20
19
18.5
18
20.5
-- 2 4
-- 2 2
-- 2 0
-- 1 8
-- 1 6
-- 1 4
-- 1 2
-- 1
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
P
E
48.5
48
49
P
E
P
E
62
64
21
21.5
22
P
E
AFT21S140W02SR3 AFT21S140W02GSR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
Figure 12. P3dB Load Pull Output Power Contours (dBm)
Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
7
8
6
10
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
7
8
6
10
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
7
8
6
10
-- 1
-- 9
0
-- 3
45
2
-- 2
-- 4
-- 5
9
-- 6
3
-- 7
-- 8
7
8
6
10
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
REAL ()
IMAGINARY ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
51
50.5
50
51.5
52
62
60
58
56
54
52
50
64
19.5
20
19
18.5
18
17.5
17
16.5
-- 2 6
-- 2 4
-- 2 2
-- 2 0
-- 1 8
-- 1 6
-- 1
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
P
E
P
E
P
E
52.5
49.5
49.5
49
P
E
66
16
-- 2 8
-- 3 0
-- 3 2
P1-P3P4-P6P7-P9P10-P12P13-P15

AFT21S140W02SR3

Mfr. #:
Buy AFT21S140W02SR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors 2110-2170 MHz 32 W Avg. 28 V
Lifecycle:
New from this manufacturer.
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