AO4812L_101

AO4812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 1 2 3 4 5 6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
50
100
150
200
250
300
350
400
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
V
DS
=15V
I
D
=6A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Power (W)
T
A
=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100
µ
s
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA
=90°C/W
Single Pulse
Rev 9: February 2011 www.aosmd.com Page 4 of 5
AO4812
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs
Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT
Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev 9: February 2011 www.aosmd.com Page 5 of 5

AO4812L_101

Mfr. #:
Manufacturer:
Description:
MOSFET 2N-CH 30V 6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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