BGA6589 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 November 2011 3 of 14
NXP Semiconductors
BGA6589
MMIC wideband medium power amplifier
5. Limiting values
[1] T
sp
is the temperature at the solder point of the ground lead, pin 2.
6. Thermal characteristics
[1] T
sp
is the temperature at the solder point of the ground lead, pin 2.
7. Characteristics
[1] V
S
= DC operating supply voltage applied to R
bias
; see Figure 10.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
D
DC device voltage on pin 1; RF input AC coupled - 6 V
I
S
DC supply current - 150 mA
P
tot
total power dissipation T
sp
70 C
[1]
- 800 mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
P
D
drive power - 15 dBm
V
ESD
electrostatic discharge
voltage
Human Body Model (HBM);
According JEDEC standard 22-A114E
- 200 V
Charged Device Model (CDM);
According JEDEC standard 22-C101B
-2 kV
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction to solder point T
sp
70 C
[1]
100 K/W
Table 7. Static characteristics
V
S
= 9 V; T
j
= 25
C; R
bias
=51
.
[1]
Symbol Parameter Conditions Min Typ Max Unit
V
D
DC device voltage on pin 1; I
S
= 81 mA - 4.8 - V
I
S
DC supply current 73 81 89 mA
Table 8. Characteristics
V
S
= 9 V; I
S
= 81 mA; T
amb
= 25
C; R
bias
=51
; IP3
(out)
tone spacing = 1 MHz; P
L
= 0 dBm per tone
(see Figure 10
); Z
L
= Z
S
= 50
; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
s
21
2
insertion power gain f = 850 MHz - 22 - dB
f = 1950 MHz - 17 - dB
f = 2500 MHz - 15 - dB
R
LIN
return losses input f = 850 MHz - 9 - dB
f = 1950 MHz - 11 - dB
f = 2500 MHz - 15 - dB
