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BGA6589,135

P1-P3P4-P6P7-P9P10-P12P13-P14
BGA6589 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 November 2011 7 of 14
NXP Semiconductors
BGA6589
MMIC wideband medium power amplifier
8. Application information
Figure 10 shows a typical application circuit for the BGA6589 MMIC. The device is
internally matched to 50 , and therefore does not require any external matching. The
value of the input and output DC blocking capacitors C1 and C2 depends on the operating
frequency; see Table 9
. Capacitors C1 and C2 are used in conjunction with L1 and C3 to
fine tune the input and output impedance. Capacitor C4 is a supply decoupling capacitor.
A 1 F capacitor (C5) can be added for optimum supply decoupling. The external
components should be placed as close as possible to the MMIC. When using via holes,
use multiple via holes per pin in order to limit ground path induction. Resistor R1 is a bias
resistor providing DC current stability with temperature.
V
S
= 9 V; R
bias
51 .
Fig 9. Supply current as a function of operating junction temperature; typical values
mgx417
I
s
(mA)
−40 40−20 0 60 80
T
j
(°C)
20
60
100
90
70
80
(1) Optional capacitor for optimum supply decoupling.
(2) R1 values at operating supply voltage (V
S
):
V
S
=6V; R1=15.
V
S
=9V; R1=51.
V
S
=11.5V; R1=82.
Fig 10. Typical application circuit
50 Ω
microstrip
C1 C2
C3
L1
V
S
50 Ω
microstrip
C4 C5
(1)
R1
(2)
mgx419
1
V
D
2
3
BGA6589 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 November 2011 8 of 14
NXP Semiconductors
BGA6589
MMIC wideband medium power amplifier
[1] Optional.
Table 9. List of components
See Figure 10 for circuit.
Component Description Type Value at operating frequency
500 MHz 800 MHz 1950 MHz 2400 MHz 3500 MHz
C1, C2 multilayer ceramic chip
capacitor
0603 220 pF 100 pF 68 pF 56 pF 39 pF
C3 multilayer ceramic chip
capacitor
0603 100 pF 68 pF 22 pF 22 pF 15 pF
C4 multilayer ceramic chip
capacitor
0603 1 nF 1 nF 1 nF 1 nF 1 nF
C5
[1]
electrolytic or tantalum
capacitor
0603 1 F1 F1 F1 F1 F
L1 SMD inductor 0603 68 nH 33 nH 22 nH 18 nH 15 nH
R1 SMD resistor, 0.5 W;
V
S
=9V
- 51 51 51 51 51
Table 10. Scattering parameters
I
S
= 81 mA; V
S
=9V; P
D
=
30 dBm; Z
O
=50
; T
amb
=25
C.
f (MHz) s
11
s
21
s
12
s
22
K factor
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
200 0.30 6.87 16.61 161.86 0.04 2.38 0.34 20.03 1.0
300 0.31 10.91 16.18 153.02 0.04 3.66 0.34 30.50 1.0
400 0.32 15.72 15.59 144.39 0.04 5.17 0.34 40.74 1.1
500 0.33 21.0 14.91 136.01 0.04 6.75 0.34 50.56 1.1
600 0.33 26.44 14.19 128.12 0.04 8.67 0.34 60.07 1.1
700 0.34 32.08 13.51 120.88 0.04 10.94 0.33 69.21 1.1
800 0.34 37.75 12.77 114.19 0.04 13.65 0.33 77.91 1.1
900 0.35 43.18 11.88 107.40 0.04 15.15 0.32 86.13 1.1
1000 0.35 48.9 11.22 101.34 0.04 17.89 0.32 94.01 1.1
1100 0.35 54.2 10.64 95.86 0.04 19.93 0.31 101.7 1.1
1200 0.35 59.55 10.0 90.82 0.05 22.11 0.30 109.1 1.1
1300 0.34 64.78 9.39 85.46 0.05 24.10 0.30 116.4 1.1
1400 0.34 69.93 8.93 80.15 0.05 24.62 0.29 123.6 1.1
1500 0.33 74.81 8.54 75.95 0.05 25.98 0.28 130.9 1.1
1600 0.33 79.82 8.07 72.26 0.05 27.67 0.27 138.2 1.1
1700 0.32 84.88 7.60 67.95 0.06 28.69 0.26 145.7 1.1
1800 0.31 89.81 7.32 63.43 0.06 28.33 0.25 153.6 1.1
1900 0.30 94.89 7.08 59.81 0.06 28.44 0.24 162.0 1.1
2000 0.29 100.3 6.74 56.09 0.07 29.27 0.23 170.7 1.1
2100 0.28 105.9 6.46 51.84 0.07 29.17 0.23 179.99 1.1
2200 0.26
111.8 6.28 48.02 0.07 28.46 0.22 170.17 1.2
2
300 0.25 118.0 6.07 45.0 0.08 28.37 0.22 160.16 1.2
2400 0.24 125.2 5.78 41.33 0.08 28.17 0.22 149.59 1.1
BGA6589 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 November 2011 9 of 14
NXP Semiconductors
BGA6589
MMIC wideband medium power amplifier
2500 0.22 132.8 5.61 36.72 0.08 26.46 0.23 139.39 1.2
2600 0.21 141.3 5.51 33.15 0.09 24.85 0.24 129.67 1.0
2700 0.21 153.3 5.33 30.04 0.09 24.72 0.28 120.55 1.2
2800 0.07 127.7 6.44 28.98 0.12 24.46 0.28 80.88 1.2
2900 0.19 167.20 4.88 19.14 0.10 20.48 0.27 105.15 1.2
3000 0.18 178.11 4.78 16.89 0.10 19.71 0.30 96.35 1.2
3100 0.18 165.13 4.57 16.56 0.11 18.98 0.32 89.48 1.0
Table 10. Scattering parameters
…continued
I
S
= 81 mA; V
S
=9V; P
D
=
30 dBm; Z
O
=50
; T
amb
=25
C.
f (MHz) s
11
s
21
s
12
s
22
K factor
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
P1-P3P4-P6P7-P9P10-P12P13-P14

BGA6589,135

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NXP Semiconductors
Description:
RF Wireless Misc MMIC AMPLIFIER
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