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MJD32CG

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 16
1 Publication Order Number:
MJD31/D
MJD31 (NPN), MJD32 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
• Epoxy Meets UL 94, V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CEO
40
100
Vdc
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CB
40
100
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
3.0 Adc
Collector Current − Peak I
CM
5.0 Adc
Base Current I
B
1.0 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
15
0.12
W
W/°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
1.56
0.012
W
W/°C
Operating and Storage Junction Temperature
Range
T
J
, T
stg
−65 to
+150
°C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
8.3 °C/W
Thermal Resistance, Junction−to−Ambient*
R
q
JA
80 °C/W
Lead Temperature for Soldering Purposes T
L
260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
A = Site Code
Y = Year
WW = Work Week
xx = 1, 1C, 2, or 2C
G = Pb−Free Package
AYWW
J3xxG
YWW
J3xxG
www.onsemi.com
DPAK IPAK
4
1
2
3
4
1
2
3
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
COMPLEMENTARY
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
MJD31, MJD32
MJD31C, MJD32C
V
CEO(sus)
40
100
−
−
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
MJD31, MJD32
(V
CE
= 60 Vdc, I
B
= 0)
MJD31C, MJD32C
I
CEO
−
−
50
50
mAdc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
EB
= 0)
ICES
− 20
mAdc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
− 1
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 1 Adc, V
CE
= 4 Vdc)
(I
C
= 3 Adc, V
CE
= 4 Vdc)
h
FE
25
10
−
50
Collector−Emitter Saturation Voltage
(I
C
= 3 Adc, I
B
= 375 mAdc)
V
CE(sat)
− 1.2
Vdc
Base−Emitter On Voltage
(I
C
= 3 Adc, V
CE
= 4 Vdc)
V
BE(on)
− 1.8
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
3 −
MHz
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz)
h
fe
20 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f
T
= ⎪h
fe
⎪• f
test
.
MJD31 (NPN), MJD32 (PNP)
www.onsemi.com
3
25
25
Figure 1. Power Derating
T, TEMPERATURE (°C)
0
50 75 100 125 150
20
15
10
5
P
D
, POWER DISSIPATION (WATTS)
Figure 2. Switching Time Test Circuit
3
0.03
I
C
, COLLECTOR CURRENT (AMPS)
0.03
0.05 0.07 0.1 0.2 0.5 0.7
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′ = t
s
- 1/8 t
f
T
J
= 25°C
t, TIME (s)μ
0.3
2
1
0.7
0.5
0.3
t
s
′
0.2
0.1
0.07
0.05
12
Figure 3. Turn−On Time
2
I
C
, COLLECTOR CURRENT (AMPS)
0.02
I
C
/I
B
= 10
T
J
= 25°C
t, TIME (s)μ
1
0.7
0.5
0.3
0.1
0.07
0.05
0.03
+11 V
25 ms
0
-9 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
≤ 10 ns
DUTY CYCLE = 1%
51
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈ 100 mA
MSD6100 USED BELOW I
B
≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
0.03 0.07 0.3 30.1 0.7
0.05
0.5 1
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
BE(off)
= 2 V
t
f
@ V
CC
= 30 V
t
f
@ V
CC
= 10 V
2.5
0
2
1.5
1
0.5
T
A
T
C
Figure 4. Turn−Off Time
T
A
(SURFACE MOUNT)
T
C
TYPICAL CHARACTERISTICS
Figure 5. Thermal Response
0.000001 0.0010.0001 0.1
100
1
0.01
0.01
t, PULSE TIME (sec)
R
q
JA
(
°
C/W)
110100 1000
0.1
10
0.00001
0.2
Single Pulse
0.1
0.05
0.02
0.01
Duty Cycle = 0.5
P1-P3P4-P6P7-P9P10-P10

MJD32CG

Mfr. #:
Buy MJD32CG
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT 3A 100V 15W PNP
Lifecycle:
New from this manufacturer.
Delivery:
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