MJD31 (NPN), MJD32 (PNP)
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4
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1
10
100
1000
0.01 0.1 1 10
I
C
, COLLECTOR CURRENT (A)
Figure 6. DC Current Gain at V
CE
= 4 V
h
FE
, DC CURRENT GAIN
V
CE
= 4 V
25°C
150°C
−55°C
1
10
100
1000
0.01 0.1 1 10
I
C
, COLLECTOR CURRENT (A)
Figure 7. DC Current Gain at V
CE
= 2 V
h
FE
, DC CURRENT GAIN
V
CE
= 2 V
25°C
150°C
−55°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.001 0.01 0.1 1 10
I
C
, COLLECTOR CURRENT (A)
Figure 8. Collector−Emitter Saturation Voltage
V
CE(sat)
, COLL−EMITT SATURATION
VOLTAGE (V)
I
C
/I
B
= 10
25°C
150°C
−55°C
V
BE(sat)
, BASE−EMITT SATURATION VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 9. Base−Emitter Saturation Voltage
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001 0.01 0.1 1 10
V
CE
= 5 V
V
BE(on)
, BASE−EMITTER ON VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 10. Base-Emitter “On” Voltage
−55°C
25°C
150°C
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001 0.01 0.1 1 10
I
C
/I
B
= 10
−55°C
25°C
150°C
0
0.4
0.8
1.2
1.6
2
0.01 0.1 1 10 100 1000
I
B
, BASE CURRENT (mA)
Figure 11. Collector Saturation Region
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
10 mA
100 mA 500 mA
1 A
I
C
= 3 A
T
A
=
25°C
MJD31 (NPN), MJD32 (PNP)
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5
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1
10
100
1000
0.1 1 10 100
V
R
, REVERSE VOLTAGE (V)
Figure 12. Capacitance
C, CAPACITANCE (pF)
C
ib
C
ob
T
A
= 25°C
1
10
100
0.001 0.01 0.1 1 10
V
CE
= 5 V
T
A
= 25°C
I
C
, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
f
T
, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
0.01
0.1
1
10
1 10 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
I
C
, COLLECTOR CURRENT (A)
MJD31 (NPN), MJD32 (PNP)
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6
TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
1
10
100
1000
0.01 0.1 1 10
I
C
, COLLECTOR CURRENT (A)
Figure 15. DC Current Gain at V
CE
= 4 V
h
FE
, DC CURRENT GAIN
V
CE
= 4 V
25°C
150°C
−55°C
1
10
100
1000
0.01 0.1 1 1
0
I
C
, COLLECTOR CURRENT (A)
Figure 16. DC Current Gain at V
CE
= 2 V
h
FE
, DC CURRENT GAIN
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0.001 0.01 0.1 1 10
V
CE
= 2 V
25°C
150°C
−55°C
25°C
150°C
−55°C
I
C
, COLLECTOR CURRENT (A)
Figure 17. Collector−Emitter Saturation
Voltage
V
CE(sat)
, COLL−EMITT SATURATION
VOLTAGE (V)
I
C
/I
B
= 10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.001 0.01 0.1 1 1
0
25°C
150°C
−55°C
I
C
, COLLECTOR CURRENT (A)
Figure 18. Base−Emitter Saturation Voltage
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0.001 0.01 0.1 1 10
V
CE
= 5 V
25°C
150°C
−55°C
I
C
, COLLECTOR CURRENT (A)
Figure 19. Base−Emitter “On” Voltage
V
BE(on)
, BASE−EMITTER ON
VOLTAGE (V)
0
0.4
0.8
1.2
1.6
2
0.01 0.1 1 10 100 100
0
I
B
, BASE CURRENT (mA)
Figure 20. Collector Saturation Region
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
10 mA
100 mA
500 mA
1 A
I
C
= 3 A
T
A
=
25°C

MJD32CG

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT 3A 100V 15W PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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