MKI50-12E7

© 2007 IXYS All rights reserved
1 - 4
MWI 50-12 E7
MKI 50-12 E7
20070912a
IXYS reserves the right to change limits, test conditions and dimensions.
Features
• NPT
3
IGBTs
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance also in resonant circuits
HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
- UL registered
Typical Applications
• MWI
- AC drives
- power supplies with power factor
correction
• MKI
- motor control
. DC motor amature winding
. DC motor excitation winding
. synchronous motor excitation winding
- supply of transformer primary winding
. power supplies
. welding
. X-ray
. battery charger
I
C25
= 90 A
V
CES
= 1200 V
V
CE(sat) typ.
= 1.9 V
IGBT Modules
Sixpack, H Bridge
Short Circuit SOA Capability
Square RBSOA
13
17
1
2
3
4
7
8
9
10
11
12
5
6
15
16
14
MWI
IGBTs
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 1200 V
V
GES
±
20 V
I
C25
T
C
= 25°C 90 A
I
C80
T
C
= 80°C 62 A
I
CM
V
GE
=
±
15 V; R
G
= 22 Ω; T
VJ
= 125°C 100 A
V
CEK
RBSOA; clamped inductive load; L = 100 µH V
CES
t
SC
V
CE
= 900 V; V
GE
=
±
15 V; R
G
= 22 Ω; T
VJ
= 125°C 10 µs
SCSOA; non-repetitive
P
tot
T
C
= 25°C 350 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C 1.9 2.4 V
T
VJ
= 125°C 2.1 V
V
GE(th)
I
C
= 2 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.8 mA
T
VJ
= 125°C 0.8 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
80 ns
t
r
50 ns
t
d(off)
680 ns
t
f
30 ns
E
on
6.0 mJ
E
off
4.0 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 3.8 nF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 50 A 350 nC
R
thJC
(per IGBT) 0.35 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 50 A
V
GE
=
±
15 V; R
G
= 22 Ω
MKI
16
14
9
10
11
12
13
17
1
2
3
4
See outline drawing for pin arrangement
E72873
p h a s e - o u t
© 2007 IXYS All rights reserved
2 - 4
MWI 50-12 E7
MKI 50-12 E7
20070912a
Diodes
Symbol Conditions Maximum Ratings
I
F25
T
C
= 25°C 110 A
I
F80
T
C
= 80°C 70 A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25°C 2.2 2.6 V
T
VJ
= 125°C 1.6 V
I
RM
I
F
= 50 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C 40 A
t
rr
V
R
= 600 V; V
GE
= 0 V 200 ns
R
thJC
(per diode) 0.61 K/W
Module
Symbol Conditions Maximum Ratings
T
VJ
operating -40...+125 °C
T
VJM
-40...+150 °C
T
stg
-40...+125 °C
V
ISOL
I
ISOL
1 mA; 50/60 Hz 2500 V~
M
d
Mounting torque (M5) 2.7 - 3.3 Nm
Symbol Conditions Characteristic Values
min. typ. max.
R
pin-chip
5mΩ
d
S
Creepage distance on surface 6 mm
d
A
Strike distance in air 6 mm
R
thCH
with heatsink compound 0.02 K/W
Weight 180 g
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.95 V; R
0
= 24 m
Ω
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 6 m
Ω
Thermal Response
IGBT (typ.)
C
th1
= 0.22 J/K; R
th1
= 0.26 K/W
C
th2
= 1.74 J/K; R
th2
= 0.09 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.151 J/K; R
th1
= 0.483 K/W
C
th2
= 1.003 J/K; R
th2
= 0.127 K/W
pins 5, 6, 7, 8 and 15 for MWI only
Dimensions in mm (1 mm = 0.0394")
* only for
devices with
NTC option
p h a s e - o u t
© 2007 IXYS All rights reserved
3 - 4
MWI 50-12 E7
MKI 50-12 E7
20070912a
01234
0
20
40
60
80
100
120
0 100 200 300 400 500
0
5
10
15
20
01234
0
20
40
60
80
100
120
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
V
V
GE
9 V
11 V
9 V
11 V
A
4 6 8 101214
0
40
80
120
160
V
V
GE
A
I
C
0123
0
40
80
120
160
V
V
F
I
F
A
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
CE
= 20 V
T
VJ
= 125°C
T
VJ
= 25°C
V
GE
= 17 V
15 V
13 V
0 200 400 600 800 1000
0
20
40
60
80
100
0
60
120
180
240
300
-di/dt
I
RM
t
rr
A/μs
MWI5012E7
I
RM
t
rr
A
ns
V
CE
= 600 V
I
C
= 50 A
T
VJ
= 125°C
V
R
= 600 V
I
F
= 60 A
13 V
15 VV
GE
= 17 V
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
p h a s e - o u t

MKI50-12E7

Mfr. #:
Manufacturer:
Description:
MOD IGBT H-BRIDGE 1200V 90A E2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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