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MKI50-12E7

P1-P3P4-P4
© 2007 IXYS All rights reserved
4 - 4
MWI 50-12 E7
MKI 50-12 E7
20070912a
0 20406080100120
0
4
8
12
16
20
0
10
20
30
40
50
60
70
80
90
100
20 40 60 80 100
0
2
4
6
8
0
200
400
600
800
0.00001 0.0001 0.001 0.01 0.1 1 10
0.0001
0.001
0.01
0.1
1
0 20 40 60 80 100 120
0
2
4
6
8
10
12
0
200
400
600
800
1000
1200
0 20 40 60 80 100 120
0.0
2.5
5.0
7.5
10.0
12.5
15.0
0
50
100
150
200
250
300
0 200 400 600 800 1000 1200 1400
0
20
40
60
80
100
120
E
off
t
d(off)
t
f
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
V
A
mJ
ns
mJ
ns
t
r
E
on
t
r
t
d(on)
diode
IGBT
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
R
G
= 22 Ω
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
V
CE
= 600 V
V
GE
= ±15 V
I
C
= 50 A
T
VJ
= 125°C
E
on
R
G
= 22 Ω
T
VJ
= 125°C
single pulse
t
d(on)
MWI5012E7
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
p h a s e - o u t
P1-P3P4-P4

MKI50-12E7

Mfr. #:
Buy MKI50-12E7
Manufacturer:
Description:
MOD IGBT H-BRIDGE 1200V 90A E2
Lifecycle:
New from this manufacturer.
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