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25C080-I/P

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
1997-2012 Microchip Technology Inc. DS21230E-page 1
25AA080/25LC080/25C080
Device Selection Table
Features:
• Low-power CMOS technology:
- Write current: 3 mA maximum
- Read current: 500 A typical
- Standby current: 500 nA typical
• 1024 x 8-bit organization
• 16 byte page
• Write cycle time: 5 ms max.
• Self-timed erase and write cycles
• Block write protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential read
• High reliability:
- Endurance: 1 M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP and SOIC (150 mil)
• Temperature ranges supported:
Description:
The Microchip Technology Inc. 25AA080/25LC080/
25C080 (25XX080
*
) are 8 Kbit Serial Electrically
Erasable PROMs. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS
) input.
Communication to the device can be paused via the
hold pin (HOLD
). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
Package Types
Block Diagram
Part
Number
VCC
Range
Max. Clock
Frequency
Temp.
Ranges
25AA080 1.8-5.5V 1 MHz I
25LC080 2.5-5.5V 2 MHz I
25C080 4.5-5.5V 3 MHz I,E
- Industrial (I): -40Cto +85C
- Automotive (E) (25C080): -40°C to +125°C
CS
SO
WP
VSS
VCC
HOLD
SCK
SI
1
2
3
4
8
7
6
5
25AA080/
PDIP/SOIC
SI
SO
SCK
CS
HOLD
WP
Status
Register
I/O Control
Memory
Control
Logic
X
Dec
HV Generator
EEPROM
Array
Page Latches
Y Decoder
Sense Amp.
R/W Control
Logic
VCC
VSS
8K SPI Bus Serial EEPROM
Not recommended for new designs –
Please use 25AA080A/B or 25LC080A/B.
25AA080/25LC080/25C080
DS21230E-page 2 1997-2012 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
VCC.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS ........................................................................................................ -0.6V to VCC + 1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias...............................................................................................................-40°C to 125°C
Soldering temperature of leads (10 seconds) .......................................................................................................+300°C
ESD protection on all pins......................................................................................................................................... 4 KV
1.1 DC Characteristics
† NOTICE: Stresses above those listed under ‘Maximum ratings’ may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended
period of time may affect device reliability.
DC CHARACTERISTICS
Industrial (I): TA = -40°C to +85°C VCC = 1.8V to 5.5V
Automotive (E):T
A = -40°C to +125°C VCC = 4.5V to 5.5V (25C080 only)
Param.
No.
Sym. Characteristic Min. Max. Units Test Conditions
D001 V
IH1 High-level input
voltage
2.0 VCC+1 V VCC2.7V (Note)
D002 V
IH2 0.7 VCC VCC+1 V VCC< 2.7V (Note)
D003 VIL1 Low-level input
voltage
-0.3 0.8 V VCC2.7V (Note)
D004 VIL2-0.30.3 VCC VVCC < 2.7V (Note)
D005 V
OL Low-level output
voltage
—0.4VIOL = 2.1 mA
D006 VOL —0.2VIOL = 1.0 mA, VCC < 2.5V
D007 VOH High-level output
voltage
VCC -0.5 — V IOH = -400 A
D008 I
LI Input leakage current -10 10 ACS = VCC, VIN = VSS TO VCC
D009 ILO Output leakage
current
-10 10 ACS = VCC, VOUT = VSS TO VCC
D010 CINT Internal Capacitance
(all inputs and
outputs)
—7pFTA = 25°C, CLK = 1.0 MHz,
V
CC = 5.0V (Note)
D011 I
CC Read
Operating Current
—
—
1
500
mA
A
VCC = 5.5V; FCLK = 3.0 MHz;
SO = Open
VCC = 2.5V; FCLK = 2.0 MHz;
SO = Open
D012 I
CC Write —
—
5
3
mA
mA
VCC = 5.5V
V
CC = 2.5V
D013 ICCS
Standby Current
—
—
5
1
A
A
CS
= VCC = 5.5V, Inputs tied to VCC or
V
SS
CS = VCC = 2.5V, Inputs tied to VCC or
V
SS
Note: This parameter is periodically sampled and not 100% tested.
1997-2012 Microchip Technology Inc. DS21230E-page 3
25AA080/25LC080/25C080
1.2 AC Characteristics
AC CHARACTERISTICS
Industrial (I): T
A = -40°C to +85°C VCC = 1.8V to 5.5V
Automotive (E): T
A = -40°C to +125°C VCC = 4.5V to 5.5V (25C080 only)
Param.
No.
Sym. Characteristic Min. Max. Units Test Conditions
1F
CLK Clock Frequency —
—
—
3
2
1
MHz
MHz
MHz
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
2T
CSS CS Setup Time 100
250
500
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
3T
CSH CS Hold Time 150
250
475
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
4T
CSD CS Disable Time 500 — ns —
5 Tsu Data Setup Time 30
50
50
—
—
—
ns
ns
ns
V
CC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
6T
HD Data Hold Time 50
100
100
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
7T
R CLK Rise Time — 2 s (Note 1)
8T
F CLK Fall Time — 2 s (Note 1)
9T
HI Clock High Time 150
230
475
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
10 T
LO Clock Low Time 150
230
475
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
11 T
CLD Clock Delay Time 50 — ns —
12 T
CLE Clock Enable Time 50 — ns —
13 T
V Output Valid from Clock Low —
—
—
150
230
475
ns
ns
ns
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
14 T
HO Output Hold Time 0 — ns (Note 1)
15 T
DIS Output Disable Time —
—
—
200
250
500
ns
ns
ns
VCC = 4.5V to 5.5V (Note 1)
V
CC = 2.5V to 4.5V (Note 1)
V
CC = 1.8V to 2.5V (Note 1)
16 T
HS HOLD Setup Time 100
100
200
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
17 T
HH HOLD Hold Time 100
100
200
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
18 T
HZ HOLD Low to Output High-Z 100
150
200
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V (Note 1)
V
CC = 2.5V to 4.5V (Note 1)
V
CC = 1.8V to 2.5V (Note 1)
19 T
HV HOLD High to Output Valid 100
150
200
—
—
—
ns
ns
ns
VCC = 4.5V to 5.5V
V
CC = 2.5V to 4.5V
V
CC = 1.8V to 2.5V
20 T
WC Internal Write Cycle Time — 5 ms —
21 — Endurance 1M — E/W
Cycles
(Note 2)
Note 1: This parameter is periodically sampled and not 100% tested.
2: This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please
consult the Total Endurance™ Model which can be obtained from Microchip’s web site at: www.microchip.com.
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25C080-I/P

Mfr. #:
Buy 25C080-I/P
Manufacturer:
Microchip Technology
Description:
EEPROM 1kx8 - 5V
Lifecycle:
New from this manufacturer.
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