BUK7L11-34ARC_4 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 16 December 2005 2 of 14
Philips Semiconductors
BUK7L11-34ARC
TrenchPLUS standard level FET
3. Ordering information
4. Limiting values
[1] Voltage is limited by clamping.
[2] Current is limited by power dissipation chip rating.
[3] Continuous current is limited by package.
[4] Refer to document
9397 750 12572
for further information.
Table 2: Ordering information
Type number Package
Name Description Version
BUK7L11-34ARC 3-lead TO-220 Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads SOT78C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC)
[1]
-34V
V
DGR
drain-gate voltage (DC) R
GS
=20kΩ
[1]
-34V
V
GS
gate-source voltage (DC) - ±20 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=10V;
Figure 2 and 3
[2] [4]
-89A
[3]
-75A
T
mb
= 100 °C; V
GS
=10V;Figure 2 -63A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs; Figure 3 - 358 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 - 172 W
I
DG(CL)
drain-gate clamping current t
p
= 5 ms; δ = 0.01 - 50 mA
I
GS(CL)
gate-source clamping current continuous - 10 mA
t
p
= 5 ms; δ = 0.01 - 50 mA
T
stg
storage temperature −55 +175 °C
T
j
junction temperature −55 +175 °C
Source-drain diode
I
DR
reverse drain current (DC) T
mb
=25°C
[2] [4]
-89A
[3]
-75A
I
DRM
peak reverse drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs - 358 A
Avalanche ruggedness
E
DS(CL)S
non-repetitivedrain-source clamped
energy
unclamped inductive load; I
D
=60A;
V
DS
≤ 34 V; V
GS
=10V;
starting at T
j
=25°C
- 465 mJ
Electrostatic discharge
V
esd
electrostatic discharge voltage; all
pins
human body model; C = 100 pF;
R = 1.5 kΩ
-8kV
human body model; C = 250 pF;
R = 1.5 kΩ
-6kV
