BUK7L11-34ARC_4 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 04 — 16 December 2005 5 of 14
Philips Semiconductors
BUK7L11-34ARC
TrenchPLUS standard level FET
6. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DG
drain-gate zener breakdown voltage I
D
= 2 mA; V
GS
=0V
T
j
=25°C 34 - 45 V
T
j
= −55 °C 34 - 45 V
V
DSR(CL)
drain-source clamping voltage (DC) I
GS(CL)
= −2 mA; I
D
= 1 A; Figure 17 and
18
-41-V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
; Figure 9 and 10
T
j
=25°C 2.2 3 3.8 V
T
j
= 150 °C 1.5 - - V
T
j
= 175 °C 1.2 - - V
T
j
= −55 °C - - 4.2 V
I
DSS
drain-source leakage current V
DS
=16V; V
GS
=0V
T
j
=25°C - 0.1 2 µA
T
j
= 150 °C-350µA
T
j
= 175 °C - 18 250 µA
V
(BR)GSS
gate-source breakdown voltage I
G
= ±1 mA; −55 °C < T
j
+ 175 °C;
Figure 18 and 19
20 22 - V
I
GSS
gate-source leakage current V
GS
= ±10 V; V
DS
=0V
T
j
=25°C - 5 1000 nA
T
j
= 175 °C --50µA
V
GS
= 16 V; V
DS
=0V
T
j
= 175 °C - - 150 µA
R
DSon
drain-source on-state resistance V
GS
= 10 V; I
D
=30A;Figure 6 and 8
T
j
=25°C-811mΩ
T
j
= 175 °C - - 20.9 mΩ
V
GS
= 16 V; I
D
=30A - 7 9.7 mΩ
R
G
internal gate resistor - 11 - Ω
Dynamic characteristics
Q
g(tot)
total gate charge I
D
= 25 A; V
DD
=27V; V
GS
=10V;
Figure 14
-53-nC
Q
gs
gate-source charge - 11 - nC
Q
gd
gate-drain (Miller) charge - 20 - nC
C
iss
input capacitance V
GS
=0V; V
DS
= 25 V; f = 1 MHz;
Figure 12
- 1880 2506 pF
C
oss
output capacitance - 640 768 pF
C
rss
reverse transfer capacitance - 400 548 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
= 1.2 Ω;
V
GS
=10V;R
G
=10Ω
-20-ns
t
r
rise time -92-ns
t
d(off)
turn-off delay time - 127 - ns
t
f
fall time - 118 - ns
