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IRF7842PBF

P1-P3P4-P6P7-P9P10-P10
HEXFET
®
Power MOSFET
Notes through are on page 10
Top View
8
1
2
3
4
5
6
7
D
D
D
DG
S
A
S
S
A
SO-8
Benefits
l Very Low R
DS(on)
at 4.5V V
GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Secondary Synchronous Rectification
for Isolated DC-DC Converters
l Synchronous Fet for Non-Isolated
DC-DC Converters
l Lead-Free
V
DSS
R
DS(on)
max
Qg (typ.)
40V
5.0m
@V
GS
= 10V
33nC
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
W
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JL
Junction-to-Drain Lead
––– 20 °C/W
R
θ
JA
––– 50
-55 to + 150
2.5
0.02
1.6
Max.
18
14
140
± 20
40
IRF7842PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
Form Quantity
Tube/Bulk 95 IRF7842PbF
Tape and Reel 4000 IRF7842TRPbF
Package Type
Standard Pack
Orderable Part Number
IRF7842PbF SO-8
Base Part Number
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IRF7842PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
ΔΒV
DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.0 5.0
mΩ
––– 4.7 5.9
V
GS(th)
Gate Threshold Voltage 1.35 ––– 2.25 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– - 5.6 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 μA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 81 ––– ––– S
Q
g
Total Gate Charge ––– 33 50
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 9.6 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.8 ––– nC
Q
gd
Gate-to-Drain Charge ––– 10 –––
Q
godr
Gate Charge Overdrive ––– 10.6 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 12.8 –––
Q
oss
Output Charge ––– 18 ––– nC
R
G
Gate Resistance ––– 1.3 2.6 Ω
t
d(on)
Turn-On Delay Time ––– 14 –––
t
r
Rise Time ––– 12 –––
t
d(off)
Turn-Off Delay Time ––– 21 ––– ns
t
f
Fall Time ––– 5.0 –––
C
iss
Input Capacitance ––– 4500 –––
C
oss
Output Capacitance ––– 680 ––– pF
C
rss
Reverse Transfer Capacitance ––– 310 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 3.1
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 140
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 99 150 ns
Q
rr
Reverse Recovery Charge ––– 11 17 nC
–––
I
D
= 14A
V
GS
= 0V
V
DS
= 20V
V
GS
= 4.5V, I
D
= 14A
V
GS
= 4.5V
Typ.
–––
V
DS
= V
GS
, I
D
= 250μA
Clamped Inductive Load
V
DS
= 20V, I
D
= 14A
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 32V, V
GS
= 0V
T
J
= 25°C, I
F
= 14A, V
DD
= 20V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 17A
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 20V, V
GS
= 4.5V
I
D
= 14A
V
DS
= 20V
Conditions
Max.
50
14
ƒ = 1.0MHz
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IRF7842PbF
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60μs PULSE WIDTH
Tj = 25°C
2.5V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤
60μs PULSE WIDTH
Tj = 150°C
2.5V
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
BOTTOM 2.5V
1.5 2.0 2.5 3.0 3.5 4.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 25V
≤
60μs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 18A
V
GS
= 10V
P1-P3P4-P6P7-P9P10-P10

IRF7842PBF

Mfr. #:
Buy IRF7842PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 40V 1 N-CH HEXFET 5mOhms 33nC
Lifecycle:
New from this manufacturer.
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